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A Armigliato

Publications and source records attributed to A Armigliato.

7 recordsLinked to original sources
PubMed2000

TEM/CBED determination of strain in silicon-based submicrometric electronic devices

The convergent beam electron diffraction technique (CBED) of the transmission electron microscopy (TEM) has been employed to determine the strain distribution along a cutline parallel to the padoxide/Si interface in a 0.80 micron wide recessed-LOCOS structure. The values of the components of the strain tensor so obtained have been compared with those computed by two simulator codes. It has been found that both the LOCOS morphology and the strain distribution deduced from TEM images and TEM/CBED patterns, respectively, were in agreement with the simulation results, if some oxidation-related parameters were modified.

Journal Article↗
PubMed2000

Dynamical simulation of LACBED patterns in cross-sectioned heterostructures

The Large Angle Convergent Beam Electron Diffraction (LACBED) technique has been applied to determination of the tetragonal mismatch in coherent Si/Si1-xGex/Si heterostructures. Two-dimensional (2D) dynamical simulation of the LACBED patterns has been performed and compared with the corresponding experimental ones. A good agreement is found in the whole simulated area, particularly as regards the splitting of the Bragg contours, due to the strain field present in the TEM cross-sections.

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PubMed2000

Metastability of Si1-yCy epilayers under 2 MeV alpha-particle irradiation

In this work we present some recent results concerning the alpha-particles irradiation of Si1-yCy alloy epitaxially grown on silicon. The study of the damage process is interesting because of the extensive use of backscattering technique as a tool of characterisation of this kind of materials and because of the possibility of adding information about the transformations that this metastable material undergoes. We point out that the irradiation damage process causes a change in the material structure different from that due to the thermal treatments. The irradiation damage occurs at a rate much higher than in Si, however it involves only a silicon atom fraction that appears to be proportional to the substitutional carbon content.

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