Baldereschi, Posternak, and Resta reply.
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Biomedical subjects
A Baldereschi
Publications and source records attributed to A Baldereschi.
Analysis of acceptor chemical shifts in Ge.
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Determination of the hole effective masses in GaAs from acceptor spectra.
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Tuning band offsets at semiconductor interfaces by intralayer deposition.
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Electronic structure of InP/Ga0.47In0.53As interfaces.
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Ab initio study of the spontaneous polarization of pyroelectric BeO.
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Quasiparticle energies in semiconductors: Self-energy correction to the local-density approximation.
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Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices.
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Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs.
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Bulk and surface electronic structure of hexagonal boron nitride.
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Erratum: Electronic interlayer states in hexagonal boron nitride
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Self-consistent Hartree-Fock and screened-exchange calculations in solids: Application to silicon.
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Electronic interlayer states in hexagonal boron nitride.
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