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A J Shields

Publications and source records attributed to A J Shields.

7 recordsLinked to original sources

A semiconductor source of triggered entangled photon pairs.

Entangled photon pairs are an important resource in quantum optics, and are essential for quantum information applications such as quantum key distribution and controlled quantum logic operations. The radiative decay of biexcitons-that is, states consisting of two bound electron-hole pairs-in a quantum dot has been proposed as a source of triggered polarization-entangled photon pairs. To date, however, experiments have indicated that a splitting of the intermediate exciton energy yields only classically correlated emission. Here we demonstrate triggered photon pair emission from single quantum dots suggestive of polarization entanglement. We achieve this by tuning the splitting to zero, through either application of an in-plane magnetic field or careful control of growth conditions. Entangled photon pairs generated 'on demand' have significant fundamental advantages over other schemes, which can suffer from multiple pair emission, or require post-selection techniques or the use of photon-number discriminating detectors. Furthermore, control over the pair generation time is essential for scaling many quantum information schemes beyond a few gates. Our results suggest that a triggered entangled photon pair source could be implemented by a simple semiconductor light-emitting diode.

Journal Article↗

Efficient single photon detection by quantum dot resonant tunneling diodes.

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

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Origin of the oscillator strength of the triplet state of a trion in a magnetic field.

The dynamics of the spin-triplet trion state, under high magnetic field in a GaAs/AlGaAs quantum well, are studied using time resolved spectroscopy. The oscillator strength of the triplet transition is shown to rise with increasing electron density, in good agreement with a theoretical model where the trion interacts with excess electrons in the quantum well. This analysis suggests that the spin-triplet trion state, which is expected to be an optically "dark" state, is experimentally observable due to the interactions with the excess electrons, demonstrating that X- cannot be regarded as an isolated three particle complex.

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Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas.

Optical spin-dynamic measurements in a high-mobility n-doped GaAs/AlGaAs quantum well show oscillatory evolution at 1.8 K consistent with a quasi-collision-free D'yakonov-Perel'-Kachorovskii regime. Above 5 K evolution becomes exponential as expected for collision-dominated spin dynamics. Momentum scattering times extracted from Hall mobility and Monte Carlo simulation of spin polarization agree at 1.8 K but diverge at higher temperatures, indicating the importance of electron-electron scattering and an intrinsic upper limit for the spin-relaxation rate.

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Observation of charge transport by negatively charged excitons.

We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X- mobility is found to be as high as 6.5 x 10(4) cm2 V-1 s-1. The results demonstrate that X- exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.

Journal Article↗

The effect of stem geometry on stresses within the distal cement mantle in total hip replacement.

Cement-stem debonding is one of the most common reasons for failure in Total Hip Replacement (THR). Four similar THR prostheses design configurations were investigated with reference to the influence of mechanical stress occurring in a cement mantle of differing thicknesses and potentially affecting clinical performance. Non-linear finite element analysis was performed on constant cement mantle thicknesses of 1, 2, and 4 millimetres. The results obtained indicate stress levels within the cement mantle decrease with increasing cement mantle thickness. The prosthesis distal tip is shown to have particular significance. Truncation of the distal tip hemisphere to a flat profile for the fixation of a centralizer increases the cement stresses.

Arthroplasty, Replacement, Hip↗