Physics. Marriage of two device concepts.
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Biomedical subjects
Alessandro Tredicucci
Publications and source records attributed to Alessandro Tredicucci.
Low-threshold quantum-cascade lasers at 3.5 THz (lambda = 85 microm).
Chirped-superlattice quantum-cascade lasers are reported that emit at lambda approximately 85 microm (3.6 THz), which is to the authors' knowledge the longest wavelength demonstrated so far with this technology. Collected peak output powers of 1.5 mW per facet were measured at liquid-helium temperature, and a maximum operating temperature of 45 K was reached. Record low-threshold-current densities of 95 and 115 A cm(-2) were observed in pulsed and continuous-wave operation, respectively. For the latter, output powers of a few hundred microwatts are estimated at low temperatures.
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Microcavity polariton splitting of intersubband transitions.
The optical response of the intersubband excitation of multiple two-dimensional electron gases within a semiconductor microcavity has been studied through angle-dependent reflectance measurements. Using a resonator based on total internal reflection, a clear splitting of about 14 meV of the coupled intersubband cavity modes is observed from 10 K to room temperature, with resulting polaritonlike dispersion. The experimental findings are in good agreement with theoretical calculations performed in a transfer-matrix formalism.
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Terahertz semiconductor-heterostructure laser.
Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.
Journal Article↗