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Biomedical subjects

Anupam Madhukar

Publications and source records attributed to Anupam Madhukar.

4 recordsLinked to original sources

Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems.

We investigate the behavior of the island vertical pairing probability in multilayer systems of Ge island quantum dots (QDs) in Si(001). By combining a simple kinetic rate model with our previously reported atomistic simulation results on the nature of the stress field from buried shallow Ge islands having {105}-oriented sidewalls, we derive an analytical expression for correlation probability as a function of the parameters characterizing the multi-QD systems. The approach is based upon continuum mechanochemical potential model, which allows one to introduce necessary elements of the kinetics of island formation in a simple way. We compare the model predictions with available experimental data and find that the model provides a satisfactory description of the coupling probability. The correlation probability behavior as a function of capping layer thickness, Ge island size, interisland distance, and Ge adatom diffusion length is investigated within the framework of the developed model.

Computer Simulation↗

Receptor-ligand-based specific cell adhesion on solid surfaces: hippocampal neuronal cells on bilinker functionalized glass.

Cell adhesion through binding between specific cell membrane receptors and corresponding cell-adhesion-molecule (CAM)-coated solid surfaces is examined. The morphology of surfaces at various modification steps leading to functionalization with cell-binding CAMs is characterized. In one week neuron cultures, enhanced growth on surfaces modified with neuron-binding versus astrocyte-binding CAMs is observed. However, nonspecific adhesion on a poly-D-lysine-coated positive control surface is found to be even higher. Potential reasons and further studies needed are discussed.

Animals↗

Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.

Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes of quantum structures, uncovered adsorbed nanocrystals or buried via epitaxical overgrowth, is successfully demonstrated through structural and optical studies. The combination InGaAs/GaAs epitaxical structures and InAs nanocrystals is employed as a vehicle with the functional aim of exploiting the well developed optoelectronic communication technology based on the former with the biochemical and biomedical applications for which the latter are well suited.

Arsenicals↗

Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.

We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.

Arsenicals↗