Diffusion of gold into InAs nanocrystals.
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Biomedical subjects
Assaf Aharoni
Publications and source records attributed to Assaf Aharoni.
Interaction of scanning probes with semiconductor nanocrystals; physical mechanism and basis for near-field optical imaging.
We investigate the modification of photoluminescence (PL) from single semiconductor nanocrystal quantum dots (NCs) in the proximity of metal and semiconducting atomic force microscope (AFM) tips. The presence of the tip alters the radiative decay rate of an emitter via interference and opens efficient nonradiative decay channels via energy transfer to the tip material. These effects cause quenching (or enhancement) of the emitter's PL intensity as a function of its distance from the interacting tip. We take advantage of this highly distance-dependent effect to realize a contrast mechanism for high-resolution optical imaging. AFM tips are optimized as energy acceptors by chemical functionalization with InAs NCs to achieve optical resolution down to 30 nm. The presented experimental scheme offers high-resolution optical information while maintaining the benefits of traditional AFM imaging. We directly measure the PL intensity of single NCs as a function of the tip distance. Our results are in good agreement with calculations made by a classical theoretical model describing an oscillating dipole interacting with a planar mirror.
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Synthesis of InAs/CdSe/ZnSe core/shell1/shell2 structures with bright and stable near-infrared fluorescence.
A complex InAs/CdSe/ZnSe core/shell1/shell2 (CSS) structure is synthesized, where the intermediate CdSe buffer layer decreases strain between the InAs core and the ZnSe outer shell. This structure leads to significantly improved fluorescence quantum yield as compared to previously prepared core/shell structures and enables growth of much thicker shells. The shell growth is done using a layer-by-layer method in which the shell cation and anion precursors are added sequentially allowing for excellent control, and a good size distribution is maintained throughout the entire growth process. The CSS structure is characterized using transmission electron microscopy, as well as by X-ray diffraction and X-ray photoelectron spectroscopy which provide evidence for shell growth. The quantum yield for CSS with small InAs cores reaches over 70%-exceptional photoluminescence intensity for III-V semiconductor nanocrystals. In larger InAs cores there is a systematic decrease in the quantum yield, with a yield of approximately 40% for intermediate size cores down to a few percent in large cores. The CSS structures also exhibit very good photostability, vastly improved over those of organically coated cores, and transformation into water environment via ligand exchange is performed without significant decrease of the quantum yield. These new InAs/CdSe/ZnSe CSS nanocrystals are therefore promising near-IR chromophores for biological fluorescence tagging and optoelectronic devices.
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Level structure of InAs quantum dots in two-dimensional assemblies.
The electronic level structure of colloidal InAs quantum dots (QDs) in two-dimensional arrays, forming a QD-solid system, was probed using scanning tunneling spectroscopy. The band gap is found to reduce compared to that of the corresponding isolated QDs. Typically, the electron (conduction-band) ground state red shifts more than the hole (valence-band) ground state. This is assigned to the much smaller effective mass of the electrons, resulting in stronger electron delocalization and larger coupling between electron states of neighboring QDs compared to the holes. This is corroborated by comparing these results with those for InAs and CdSe nanorod assemblies, manifesting the effects of the electron effective mass and arrangement of nearest neighbors on the band gap reduction. In addition, in InAs QD arrays, the levels are broadened, and in some cases their discrete level structure was nearly washed out completely and the tunneling spectra exhibited a signature of two-dimensional density of states.
Arsenicals↗
Shape control of III-V semiconductor nanocrystals: synthesis and properties of InAs quantum rods.
A novel approach for synthesis of soluble semiconductor quantum rods using metal nanoparticles to direct and catalyze one-dimensional growth is developed. The method is useful in particular for III-V semiconductors with cubic lattice, where the utilization of surfactant-controlled rod-growth is not easily realized. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. Centrifugation is used for separation of rod-fractions with different lengths. The reaction is demonstrated for InAs, InP and GaAs. Focusing on InAs rods as a model system, we examined the effects of the type of metal catalyst, and the tuning of reaction conditions with respect to temperature, concentration, catalyst content and reaction time. Within the three types of metal catalysts used--Au, Ag and In, Au was found to provide the best control for achieving rod-growth even though the melting point of bulk gold is significantly higher then the reaction temperature. The structural properties of the rods were characterized by transmission electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy. Rods have a cubic lattice and grow mainly along the [111] direction. The relative gold content decreases in shorter rods suggesting Au depletion as a cause for limiting the growth. Room and low temperature absorption and photoluminescence measurements show that the band-gap shifts to the red upon increasing rod length revealing strong quantum confinement along the long axis in InAs rods, providing spectral coverage of the near-IR range relevant for telecommunication applications. Emission intensity also decreases with increased rod-length. These length dependent properties manifest the transition from 0D to 1D quantum confined systems.
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