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Aykutlu Dâna

Publications and source records attributed to Aykutlu Dâna.

3 recordsLinked to original sources

Differentiation of domains in composite surface structures by charge-contrast X-ray photoelectron spectroscopy.

An external bias is applied to two samples containing composite surface structures, while recording an XPS spectrum. Altering the polarity of the bias affects the extent of differential charging in domains that are chemically or electronically different to create a charge contrast. By utilizing this charge contrast, we show that two distinct silicon nitride and silicon oxynitride domains are present in one of the composite samples. Similarly, we use this technique to show that titanium oxide and silicon oxide domains exist as separate chemical entities in another composite sample.

Journal Article↗

X-ray photoemission for probing charging/discharging dynamics.

A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to +/-10.0 V square-wave pulses with varying frequencies in the range of 10(-3) to 10(3) Hz. For a clean silicon sample, the Si2p(Si(0)) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si(4+)) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiO(x) and TiO(y) moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity.

Letter↗

High-refractive-index measurement with an elastomeric grating coupler.

An elastomeric grating coupler fabricated by the replica molding technique is used to measure the modal indices of a silicon-on-insulator (SOI) planar waveguide structure. Because of the van der Waals interaction between the grating mold and the waveguide, the elastomeric stamp makes conformal contact with the waveguide surface, inducing a periodic index perturbation at the contact region. The phase of the incident light is changed to match the guided modes of the waveguide. The modal and bulk indices are obtained by measuring the coupling angles. This technique serves to measure the high refractive index with a precision better than 10(-3) and allows the elastomeric stamp to be removed without damaging the surface of the waveguide.

Elastomers↗