Biomedical subjects

B Hitti

Publications and source records attributed to B Hitti.

At least 19 recordsLinked to original sources

PubMed2005

Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs.

We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.

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PubMed2004

Muonium as a shallow center in GaN.

A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the <0001> direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c axis. Its small ionization energy (<or=14 meV) and small hyperfine parameter (approximately 10(-4) times the vacuum value) indicate that muonium in one of its possible sites produces a shallow state, raising the possibility that the analogous hydrogen center could be a source of n-type conductivity in as-grown GaN.

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PubMed2001

Muonium analog of hydrogen passivation: observation of the Mu+-Zn- reaction in GaAs.

We report direct detection of the formation and subsequent breakup of a complex containing positively charged muonium ( Mu+) and a substitutional Zn(Ga) acceptor in heavily doped p-type GaAs:Zn. Mu+ diffuses above 200 K with a hop rate nu = nu(0)e(-E(nu)/k(B)T) where nu(0) = (7.7+/-2.0)x10(8) s(-1) and E(nu) = 0.15(4) eV. Above 350 K, it forms the complex with a trapping radius of 500+/-200 A. The Mu-Zn complex breaks up above 550 K with a dissociation energy of 0.88(7) eV and prefactor of (5+/-4)x10(12) s(-1). Above 750 K, the cyclic reaction Mu+<--> Mu0 takes place.

Journal Article↗

PubMed2000

Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.

Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.

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PubMed1996