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B Kardynal

Publications and source records attributed to B Kardynal.

5 recordsLinked to original sources
PubMed2002

Tunneling spectroscopy of a two-dimensionally periodic electron system.

The tunneling current between an electron gas with a periodic potential in two dimensions and a plain two-dimensional electron system (2DES) has been studied. The strength of the periodic potential, the subband energy of the plain 2DES, and an applied in-plane magnetic field were varied, mapping the Fourier transform of the periodic wave function. Periodic peaks were observed and explained by translations in the reciprocal lattice. When the potential was strongly modulated to form an array of antidots, commensurability peaks were seen in lateral transport, but, as expected, not in tunneling.

Journal Article↗
PubMed2000

Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.

Journal Article↗
PubMed2000

Off-axis electron holography of patterned magnetic nanostructures.

Magnetization reversal processes in lithographically patterned magnetic elements that have lateral dimensions of 70-500 nm, thicknesses of 3-30 nm and a wide range of shapes and layer sequences have been followed in situ using off-axis electron holography in the transmission electron microscope. This technique allows domain structures within individual elements and the magnetic interactions between them to be quantified at close to the nanometre scale. The behaviour of 30 nm-thick Co elements was compared with that of 10 nm-thick Ni and Co elements, as well as with Co/Au/Ni trilayers. The hysteresis loops of individual elements were determined directly from the measured holographic phase images. The reproducibility of an element's domain structure in successive cycles was found to be affected by the out-of-plane component of the applied magnetic field and by the exact details of its initial magnetic state. Close proximity to adjacent elements led to strong intercell coupling, and remanent states with the in-plane magnetic field removed included domain structures such as solenoidal (vortex) states that were never observed during hysteresis cycling. Narrow rectangular bars reversed without the formation of end domains, whereas closely separated magnetic layers within individual elements were observed to couple to each other during field reversal.

Journal Article↗
PubMed1998

In Situ Transmission Electron Microscopy Observations of Silicidation Processes for Cobalt Thin Films Deposited on Silicon.

: Morphological evolution associated with silicidation of Co thin films deposited on (100) and (111) Si substrates has been followed using transmission electron microscopy with in situ thermal annealing from ambient temperature up to 850 degreesC. Noticeable structural changes associated with the formation of CoSi2 occur at temperatures as low as 400 degreesC and the reaction is essentially complete at about 500 degreesC. Prolonged heating above 500 degreesC leads to CoSi2 grain growth and coalescence and, finally, to pinholes formation. Silicidation of Co films on (100) and (111) Si substrates follows the same pattern. The morphology of films annealed in situ is similar to those annealed ex situ except that the Si/CoSi2 interface appears to be much rougher. This behavior is associated with the specific geometry of cross-sectional TEM specimens, where surface diffusion dominates bulk diffusion. Very thin Co films, which have less contribution from surface diffusion than thicker films, are ideal for studying dynamic phenomena at Co/Si reactive interfaces.

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