Direct determination of the electron-electron-hole Auger threshold energy in silicon.
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Biomedical subjects
B Monemar
Publications and source records attributed to B Monemar.
Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.
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S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance.
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Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructures.
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Shake-up intersubband processes in quantum-well luminescence.
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Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wells.
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Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells.
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Free and acceptor-bound excitons in the transition region between two-dimensional and quasi-three-dimensional GaAs/AlxGa1-xAs systems.
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Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.
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Magnetic-resonance studies of tellurium-doped AlxGa1-xAs.
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Electronic structure of a photoluminescent center in silver-doped silicon.
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Observation of rapid direct charge transfer between deep defects in silicon.
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Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wells.
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Metastable chalcogen-related luminescent centers in silicon.
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Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures.
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Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells.
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Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limit.
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Mechanism of the configurational change of metastable defects in silicon.
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