Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy.
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Biomedical subjects
BA Joyce
Publications and source records attributed to BA Joyce.
Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001).
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Reentrant layer-by-layer etching of GaAs(001).
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Arsenic-deficient GaAs(001)-(2 x 4) surfaces: Scanning-tunneling-microscopy evidence for locally disordered (1 x 2) Ga regions.
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Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001).
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Misorientation dependence of epitaxial growth on vicinal GaAs(001).
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