Biomedical subjects

Beng S Ong

Publications and source records attributed to Beng S Ong.

6 recordsLinked to original sources

PubMed2006

Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors.

A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.

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PubMed2006

Printed silver ohmic contacts for high-mobility organic thin-film transistors.

Oleic acid-stabilized silver nanoparticles prepared by a facile synthesis afforded highly conductive elements upon proper annealing. Regioregular polythiophene-based thin-film transistors (OTFTs) using source/drain electrodes prepared from these silver nanoparticles provided excellent field-effect characteristics, despite a significant difference between the work function of silver and the HOMO of polythiophene semiconductor. This was attributable to conductive doping of the semiconductor interface by residual oleic acid or its thermally transformed derivative from the silver electrodes, thus enabling ohmic contact formation. This is in sharp contrast to the OTFTs with silver electrodes fabricated from both vacuum deposition and oleylamine-stabilized silver nanoparticles, which exhibited markedly lower mobility and current on/off ratio, a consequence of energetic mismatch of the electrode/semiconductor pairs.

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PubMed2005

Facile synthesis of silver nanoparticles useful for fabrication of high-conductivity elements for printed electronics.

A facile synthesis of stable silver nanoparticles having a particle size of <10 nm is described. The synthesis involved reduction of silver acetate with a substituted hydrazine, such as PhNHNH2, in the presence of a 1-alkylamine, such as C16H33NH2, in toluene at 25-60 degrees C. Spin-coated thin films or printed electronic features of alkylamine-stabilized silver nanoparticles could be easily converted at 120-160 degrees C into highly conductive films or elements with conductivity of 2-4 x 104 S cm-1. Organic thin-film transistors with printed silver source/drain electrodes of this nature exhibited field-effect transistor properties which are similar to those of the devices using vacuum-deposited silver electrodes.

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PubMed2005

Indolo[3,2-b]carbazole-based thin-film transistors with high mobility and stability.

Proper functionalization of indolo[3,2-b]carbazole led to a new class of high-performance organic semiconductors suitable for organic thin-film transistor (OTFT) applications. While 5,11-diaryl-substituted indolo[3,2-b]carbazoles without long alkyl side chains provided amorphous thin films upon vacuum deposition, those with sufficiently long alkyl side chains such as 5,11-bis(4-octylphenyl)indolo[3,2-b]carbazole self-organized readily into highly crystalline layered structures under similar conditions. OTFTs using channel semiconductors of this nature exhibited excellent field-effect properties, with mobility up to 0.12 cm(2) V(-1) s(-1) and current on/off ratio to 10(7). As this class of organic semiconductors has relatively low HOMO levels and large band gaps, they also displayed good environmental stability even with prolonged exposure to amber light, an appealing characteristic for OTFT applications.

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PubMed2004

Lamination method for the study of interfaces in polymeric thin film transistors.

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.

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PubMed2004

High-performance semiconducting polythiophenes for organic thin-film transistors.

Conjugated polymers have been widely studied as potential semiconductor materials for organic thin-film transistors (TFTs). However, they have provided functionally poor transistor properties when the TFTs are fabricated in air. We have developed a class of liquid crystalline regioregular polythiophenes, PQTs, that possess sufficient air stability to enable achievement of excellent TFT properties under ambient conditions. These polythiophenes exhibit unique self-assembly ability and form highly structured thin films when deposited from solution under appropriate conditions. TFTs fabricated in air with PQT channel layers have provided high field-effect mobility to 0.14 cm2 V-1 s-1 and high current modulation to over 107, together with other desirable transistor properties. These high-performance polythiophenes will therefore help bring the long-standing concept of low-cost organic/polymer transistor circuits closer to commercial reality.

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