Complementary symmetry silicon nanowire logic: power-efficient inverters with gain.
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Boron↗
Biomedical subjects
Bonnie A Sheriff
Publications and source records attributed to Bonnie A Sheriff.
Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.
Journal Article↗
Silicon p-FETs from ultrahigh density nanowire arrays.
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm-3. Top-gated 4-microm-wide Si nanowire p-FETs yielded low off-currents (approximately 10(-12) A), high on/off ratios (10(5)-10(6)), good on current values (30 microA/microm), high mobilities (approximately 100 cm2/V-s), and low subthreshold swing values (approximately 80 mV/decade between 10(-12) and 10(-10) A increasing to 200 mV/decade between 10(-10)-10(-8) A).
Electric Impedance↗
Nanoscale patterning of alkyl monolayers on silicon using the atomic force microscope.
Self-assembled monolayers (SAMs) of 1-alkenes on hydrogen-passivated silicon substrates were successfully patterned on the nanometer scale using an atomic force microscope (AFM) probe tip. Nanoshaving experiments on alkyl monolayers formed on H-Si(111) not only demonstrate the flexibility of this technique but also show that patterning with an AFM probe is a viable method for creating well-defined, nanoscale features in a monolayer matrix in a reproducible and controlled manner. Features of varying depths (2-15 nm) were created in the alkyl monolayers by controlling the applied load and the number of etching scans made at high applied loads. The patterning on these SAM films is compared with the patterning of alkyl siloxane monolayers on silicon and mica.
Alkenes↗