Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells.
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Biomedical subjects
CE Stutz
Publications and source records attributed to CE Stutz.
Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure.
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Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures.
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Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.
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Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.
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Electric-field effects of the excitons in asymmetric triangular AlxGa1-xAs-GaAs quantum wells.
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Free-to-bound and light- and heavy-hole bound-exciton transitions in AlxGa1-xAs-GaAs multiple quantum wells.
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Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier.
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Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.
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Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 degreesC: Observation of an EL2-like defect.
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Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier in AlxGa1-xAs/GaAs multiple-quantum-well structures.
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Electric field dependence of exciton oscillator strengths in GaAs-AlxGa1-xAs quantum wells studied by photocurrent spectroscopy.
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Binding energies of biexcitons in AlxGa1-xAs/GaAs multiple quantum wells.
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Extrinsic contributions to photoreflectance of AlxGa1-xAs/GaAs quantum wells: An investigation of the "donor-related" feature.
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Electric field dependence of exciton transition energies in GaAs-AlxGa
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