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Catherine H Crouch

Publications and source records attributed to Catherine H Crouch.

2 recordsLinked to original sources

Fluorescence blinking statistics from CdSe core and core/shell nanorods.

We report fluorescence blinking statistics measured from single CdSe nanorods (NRs) of seven different sizes with aspect ratios ranging from 3 to 11. This study also included core/shell CdSe/ZnSe NRs and core NRs with two different surface ligands producing different degrees of surface passivation. We compare the findings for NRs to our measurements of blinking statistics from spherical CdSe core and CdSe/ZnS core/shell nanocrystals (NCs). We find that, for both NRs and spherical NCs, the off-time probability distributions are well described by a power law, while the on-time probability distributions are best described by a truncated power law, P(tau(on)) approximately tau(on)(-alpha)e((-tau)(on)/(tau)(c)). The measured crossover time, tau(c), is indistinguishable within experimental uncertainty for core and core/shell NRs, as well as for core NRs with different ligands, for the same core size, indicating that surface passivation does not affect the blinking statistics significantly. We find that, at fixed excitation intensity, 1/tau(c) increases approximately linearly with increasing NR aspect ratio; for a given sample, 1/tau(c) increases very gradually with increasing excitation intensity. Examining 1/tau(c)versus the single-particle photon absorption rate for all samples indicates that the change in NR absorption cross section with sample size can account for some but not all of the differences in crossover time. This suggests that the degree of quantum confinement may be partially responsible for the aspect ratio dependence of the crossover time.

Absorption↗

Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes.

We investigated the current-voltage characteristics and responsivity of photodiodes fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a sulfur-containing atmosphere. The photodiodes that we fabricated have a broad spectral response ranging from the visible to the near infrared (400-1600 nm). The responsivity depends on substrate doping, microstructuring fluence, and annealing temperature. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, 2 orders of magnitude higher than for standard silicon photodiodes. For wavelengths below the bandgap we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm.

Journal Article↗