PubMed Health⌕ Search

Biomedical subjects

Charles M Lieber

Publications and source records attributed to Charles M Lieber.

17 recordsLinked to original sources
PubMed2004

Electrical detection of single viruses.

We report direct, real-time electrical detection of single virus particles with high selectivity by using nanowire field effect transistors. Measurements made with nanowire arrays modified with antibodies for influenza A showed discrete conductance changes characteristic of binding and unbinding in the presence of influenza A but not paramyxovirus or adenovirus. Simultaneous electrical and optical measurements using fluorescently labeled influenza A were used to demonstrate conclusively that the conductance changes correspond to binding/unbinding of single viruses at the surface of nanowire devices. pH-dependent studies further show that the detection mechanism is caused by a field effect, and that the nanowire devices can be used to determine rapidly isoelectric points and variations in receptor-virus binding kinetics for different conditions. Lastly, studies of nanowire devices modified with antibodies specific for either influenza or adenovirus show that multiple viruses can be selectively detected in parallel. The possibility of large-scale integration of these nanowire devices suggests potential for simultaneous detection of a large number of distinct viral threats at the single virus level.

Animals↗
PubMed2004

Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures.

Substantial effort has been placed on developing semiconducting carbon nanotubes and nanowires as building blocks for electronic devices--such as field-effect transistors--that could replace conventional silicon transistors in hybrid electronics or lead to stand-alone nanosystems. Attaching electric contacts to individual devices is a first step towards integration, and this step has been addressed using lithographically defined metal electrodes. Yet, these metal contacts define a size scale that is much larger than the nanometre-scale building blocks, thus limiting many potential advantages. Here we report an integrated contact and interconnection solution that overcomes this size constraint through selective transformation of silicon nanowires into metallic nickel silicide (NiSi) nanowires. Electrical measurements show that the single crystal nickel silicide nanowires have ideal resistivities of about 10 microOmega cm and remarkably high failure-current densities, >10(8) A cm(-2). In addition, we demonstrate the fabrication of nickel silicide/silicon (NiSi/Si) nanowire heterostructures with atomically sharp metal-semiconductor interfaces. We produce field-effect transistors based on those heterostructures in which the source-drain contacts are defined by the metallic NiSi nanowire regions. Our approach is fully compatible with conventional planar silicon electronics and extendable to the 10-nm scale using a crossed-nanowire architecture.

Journal Article↗
PubMed2004

Semiconductor nanowire heterostructures.

Recent progress on the synthesis and characterization of semiconductor nanowire heterostructures is reviewed. We describe a general method for heterostructure synthesis based on chemical vapour deposition and the vapour-liquid-solid growth of crystalline semiconducting nanowires. We then examine examples of nanowire heterostructures for which physical properties have been measured, considering the effects of synthetic conditions on the heterointerfaces as well as the electrical and optical characterization measurements that reveal heterointerface formation and quality. Finally, we identify areas of technical and conceptual progress that can contribute to the development of functional nanowire heterostructures.

Journal Article↗
PubMed2003

Nanowire crossbar arrays as address decoders for integrated nanosystems.

The development of strategies for addressing arrays of nanoscale devices is central to the implementation of integrated nanosystems such as biological sensor arrays and nanocomputers. We report a general approach for addressing based on molecular-level modification of crossed semiconductor nanowire field-effect transistor (cNW-FET) arrays, where selective chemical modification of cross points in the arrays enables NW inputs to turn specific FET array elements on and off. The chemically modified cNW-FET arrays function as decoder circuits, exhibit gain, and allow multiplexing and demultiplexing of information. These results provide a step toward the realization of addressable integrated nanosystems in which signals are restored at the nanoscale.

Journal Article↗
PubMed2003

Synthesis of CdS and ZnS nanowires using single-source molecular precursors.

Single-source molecular precursors were used to synthesize II-VI compound semiconductor nanowires for the first time. Cadmium sulfide and zinc sulfide nanowires were prepared using cadmium diethyldithiocarbamate, Cd(S2CNEt2)2, and zinc diethyldithiocarbamate, Zn(S2CNEt2)2, respectively, as precursors in a gold nanocluster-catalyzed vapor-liquid-solid growth process. High-resolution transmission electron microscopy studies show that the CdS and ZnS nanowires are single-crystal wurtzite structures with stoichiometric compositions. In addition, photoluminescence measurements demonstrate that these nanowires exhibit high-quality optical properties. The applicability of our approach to the synthesis of other compound and alloy semiconductors nanowires as well as nanowire heterostructures of these materials is discussed.

Journal Article↗
PubMed2003

Single-nanowire electrically driven lasers.

Electrically driven semiconductor lasers are used in technologies ranging from telecommunications and information storage to medical diagnostics and therapeutics. The success of this class of lasers is due in part to well-developed planar semiconductor growth and processing, which enables reproducible fabrication of integrated, electrically driven devices. Yet this approach to device fabrication is also costly and difficult to integrate directly with other technologies such as silicon microelectronics. To overcome these issues for future applications, there has been considerable interest in using organic molecules, polymers, and inorganic nanostructures for lasers, because these materials can be fashioned into devices by chemical processing. Indeed, amplified stimulated emission and lasing have been reported for optically pumped organic systems and, more recently, inorganic nanocrystals and nanowires. However, electrically driven lasing, which is required in most applications, has met with several difficulties in organic systems, and has not been addressed for assembled nanocrystals or nanowires. Here we investigate the feasibility of achieving electrically driven lasing from individual nanowires. Optical and electrical measurements made on single-crystal cadmium sulphide nanowires show that these structures can function as Fabry-Perot optical cavities with mode spacing inversely related to the nanowire length. Investigations of optical and electrical pumping further indicate a threshold for lasing as characterized by optical modes with instrument-limited linewidths. Electrically driven nanowire lasers, which might be assembled in arrays capable of emitting a wide range of colours, could improve existing applications and suggest new opportunities.

Journal Article↗
PubMed2003

Scalability simulations for nanomemory systems integrated on the molecular scale.

Simulations were performed to assess the prospective performance of a 16 Kbit nanowire-based electronic nanomemory system. Commercial off-the-shelf microcomputer system modeling software was applied to evaluate the operation of an ultra-dense storage array. This array consists of demonstrated experimental non-volatile nanowire diode switches, plus encoder-decoder structures consisting of demonstrated experimental nanowire-based nanotransistors, with nanowire interconnects among all the switching devices. The results of these simulations suggest that a nanomemory of this type can be operated successfully at a density of 10(11) bits/cm(2). Furthermore, modest device alterations and system design alternatives are suggested that might improve the performance and the scalability of the nanomemory array. These simulations represent early steps toward the development of a simulation-based methodology to guide nanoelectronic system design in a manner analogous to the way such methodologies are used to guide microelectronic system design in the silicon industry.

Computer Simulation↗
PubMed2002

Epitaxial core-shell and core-multishell nanowire heterostructures.

Semiconductor heterostructures with modulated composition and/or doping enable passivation of interfaces and the generation of devices with diverse functions. In this regard, the control of interfaces in nanoscale building blocks with high surface area will be increasingly important in the assembly of electronic and photonic devices. Core-shell heterostructures formed by the growth of crystalline overlayers on nanocrystals offer enhanced emission efficiency, important for various applications. Axial heterostructures have also been formed by a one-dimensional modulation of nanowire composition and doping. However, modulation of the radial composition and doping in nanowire structures has received much less attention than planar and nanocrystal systems. Here we synthesize silicon and germanium core-shell and multishell nanowire heterostructures using a chemical vapour deposition method applicable to a variety of nanoscale materials. Our investigations of the growth of boron-doped silicon shells on intrinsic silicon and silicon-silicon oxide core-shell nanowires indicate that homoepitaxy can be achieved at relatively low temperatures on clean silicon. We also demonstrate the possibility of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets drive hole injection into either germanium core or shell regions. Our synthesis of core-multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.

Journal Article↗
PubMed2002

Chemical force spectroscopy in heterogeneous systems: intermolecular interactions involving epoxy polymer, mixed monolayers, and polar solvents.

We used chemical force microscopy (CFM) to study adhesive forces between surfaces of epoxy resin and self-assembled monolayers (SAMs) capable of hydrogen bonding to different extents. The influence of the liquid medium in which the experiments were carried out was also examined systematically. The molecular character of the tip, polymer, and liquid all influenced the adhesion. Complementary macroscopic contact angle measurements were used to assist in the quantitative interpretation of the CFM data. A direct correlation between surface free energy and adhesion forces was observed in mixed alcohol-water solvents. An increase in surface energy from 2 to 50 mJ/m(2) resulted in an increase in adhesion from 4-8 nN to 150-300 nN for tips with radii of 50-150 nm. The interfacial surface energy for identical nonpolar surface groups of SAMs was found not to exceed 2 mJ/m(2). An analysis of adhesion data suggests that the solvent was fully excluded from the zone of contact between functional groups on the tip and sample. With a nonpolar SAM, the force of adhesion increased monotonically in mixed solvents of higher water content; whereas, with a polar SAM (one having a hydrogen bonding component), higher water content led to decreased adhesion. The intermolecular force components theory was used for the interpretation of adhesion force measurements in polar solvents. Competition between hydrogen bonding within the solvent and hydrogen bonding of surface groups and the solvent was shown to provide the main contribution to adhesion forces. We demonstrate how the trends in the magnitude of the adhesion forces for chemically heterogeneous systems (solvents and surfaces) measured with CFM can be quantitatively rationalized using the surface tension components approach. For epoxy polymer, inelastic deformations also contributed heavily to measured adhesion forces.

Epoxy Resins↗
PubMed2002

Growth of nanowire superlattice structures for nanoscale photonics and electronics.

The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse applications in nanoelectronics and photonics. Individual semiconducting nanowires have already been configured as field-effect transistors, photodetectors and bio/chemical sensors. More sophisticated light-emitting diodes (LEDs) and complementary and diode logic devices have been realized using both n- and p-type semiconducting nanowires or nanotubes. The n- and p-type materials have been incorporated in these latter devices either by crossing p- and n-type nanowires or by lithographically defining distinct p- and n-type regions in nanotubes, although both strategies limit device complexity. In the planar semiconductor industry, intricate n- and p-type and more generally compositionally modulated (that is, superlattice) structures are used to enable versatile electronic and photonic functions. Here we demonstrate the synthesis of semiconductor nanowire superlattices from group III-V and group IV materials. (The superlattices are created within the nanowires by repeated modulation of the vapour-phase semiconductor reactants during growth of the wires.) Compositionally modulated superlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared. Furthermore, n-Si/p-Si and n-InP/p-InP modulation doped nanowires have been synthesized. Single-nanowire photoluminescence, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.

Journal Article↗
PubMed2002

One-dimensional energy dispersion of single-walled carbon nanotubes by resonant electron scattering.

We characterized the energy band dispersion near the Fermi level in single-walled carbon nanotubes using low-temperature scanning tunneling microscopy. Analysis of energy-dependent standing wave oscillations, which result from quantum interference of electrons resonantly scattered by defects, yields a linear energy dispersion near E(F), and indicates the importance of parity in scattering for armchair single-walled carbon nanotubes. Additionally, these data provide values of the tight-binding overlap integral and Fermi wave vector, in good agreement with previous work, but indicate that the electron coherence length is substantially shortened.

Journal Article↗
PubMed2002

Direct visualization of a DNA glycosylase searching for damage.

DNA glycosylases preserve the integrity of genetic information by recognizing damaged bases in the genome and catalyzing their excision. It is unknown how DNA glycosylases locate covalently modified bases hidden in the DNA helix amongst vast numbers of normal bases. Here we employ atomic-force microscopy (AFM) with carbon nanotube probes to image search intermediates of human 8-oxoguanine DNA glycosylase (hOGG1) scanning DNA. We show that hOGG1 interrogates DNA at undamaged sites by inducing drastic kinks. The sharp DNA bending angle of these non-lesion-specific search intermediates closely matches that observed in the specific complex of 8-oxoguanine-containing DNA bound to hOGG1. These findings indicate that hOGG1 actively distorts DNA while searching for damaged bases.

Base Pairing↗
PubMed2002

Fundamental electronic properties and applications of single-walled carbon nanotubes.

Recent scanning tunneling microscopy studies of the intrinsic electronic properties of single-walled carbon nanotubes (SWNTs) are overviewed in this Account. A brief theoretical treatment of the electronic properties of SWNTs is developed, and then the effects of finite curvature and broken symmetry on electronic properties, the unique one-dimensional energy dispersion in nanotubes, the interaction between local spins and carriers in metallic nanotubes systems, and the atomic structure and electronic properties of intramolecular junctions are described. The implications of these studies for understanding fundamental one-dimensional physics and future nanotube device applications are also discussed.

Journal Article↗
PubMed2002

Single-walled carbon nanotubes: from fundamental studies to new device concepts.

Single-walled carbon nanotubes (SWNTs) are ideal systems for investigating fundamental properties in one-dimensional electronic systems and have the potential to revolutionize many aspects of nano/molecular electronics. Scanning tunneling microscopy (STM) has been used to characterize the atomic structure and tunneling density of states of individual SWNTs. Detailed spectroscopic measurements showed one-dimensional singularities in the SWNT density of states for both metallic and semiconducting nanotubes. The results obtained were compared to and agree well with theoretical predictions and tight-binding calculations. SWNTs were also shortened using the STM to explore the role of finite size, which might be exploited for device applications. Segments less than 10 nm exhibited discrete peaks in their tunneling spectra, which correspond to quantized energy levels, and whose spacing scales inversely with length. Finally, the interaction between magnetic impurities and electrons confined to one dimension was studied by spatially resolving the local electronic density of states of small cobalt clusters on metallic SWNTs. Spectroscopic measurements performed on and near these clusters exhibited a narrow peak near the Fermi level that has been identified as a Kondo resonance. In addition, spectroscopic studies of ultrasmall magnetic nanostructures, consisting of small cobalt clusters on short nanotube pieces, exhibited features characteristic of the bulk Kondo resonance, but also new features due to their finite size.

Magnetics↗
PubMed2001

Scanning tunneling microscopy studies of the one-dimensional electronic properties of single-walled carbon nanotubes.

Recent developments in scanning tunneling microscopy studies of the electronic properties of single-walled carbon nanotubes are reviewed. A broad range of topics focused on the unique electronic properties of nanotubes are discussed, including (a) the underlying theoretical description of the electronic properties of nanotubes; (b) the roles of finite curvature and broken symmetries in perturbing electronic properties; (c) the unique one-dimensional energy dispersion in nanotubes; (d) the nature of end states; (e) quantum size effects in short tubes; (f) the interactions between local spins and carriers in metallic systems (the Kondo effect); and (g) the atomic structure and electronic properties of intramolecular junctions. The implications of these studies for understanding fundamental one-dimensional physics and future nanotube device applications are discussed.

Journal Article↗