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Christian Klinke

Publications and source records attributed to Christian Klinke.

5 recordsLinked to original sources

Field-effect transistors assembled from functionalized carbon nanotubes.

We have fabricated field-effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing a hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices thus fabricated show excellent electrical characteristics.

Electrochemistry↗

Enhanced field emission from multiwall carbon nanotube films by secondary growth.

We have studied nickel, gold, and ferritin coatings on catalytically grown multiwall carbon nanotubes as well as the generation of secondary nanotubes by resubmitting the decorated nanotubes to the chemical vapor deposition process. Nickel layers sputtered on nanotubes show a stronger interaction with the nanotube walls than gold coatings. At ambient temperature this results in a metal film that is more homogeneous for Ni than for Au. Surface mass transport at elevated temperatures leads to a transformation of the coating to nanoscale clusters on the nanotube surface. The resulting Au clusters are spherelike with a very small contact area with the nanotube whereas the Ni clusters are stretched along the tube axis and have a large contact area. Secondary nanotubes were established by growing nanotubes directly on the walls of primary nanotubes. Thin Ni layers or ferritin served as catalysts. We compared the field emission properties of samples with and without secondary nanotubes. The presence of secondary nanotubes enhances the field emission substantially.

Journal Article↗

Tungsten oxide nanowire growth by chemically induced strain.

We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.

Journal Article↗

Charge transfer induced polarity switching in carbon nanotube transistors.

We probed the charge transfer interaction between the amine-containing molecules hydrazine, polyaniline, and aminobutyl phosphonic acid and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF-transistor states, utilizing hydrazine as dopant. We effectively switched the transistor polarity between p- and n- type by accessing different oxidation states of polyaniline. We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule.

Amines↗

Field emission of individual carbon nanotubes in the scanning electron microscope.

The field emission of individual multiwall carbon nanotubes grown by chemical vapor deposition was measured in a scanning electron microscope. By using a sharp anode, we were able to select one nanotube for measurements in carefully controlled conditions. Single nanotubes follow the Fowler-Nordheim law, and the dependence of the field enhancement with interelectrode distance and nanotube radius is in good agreement with the recent model of Edgcombe and Valdré. Our results suggest that only nanotubes with the highest field enhancement factors, i.e., at least 8x higher than those of the average nanotube population, contribute to the emitted current in usual large area measurements.

Journal Article↗