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Christoph Hagleitner

Publications and source records attributed to Christoph Hagleitner.

2 recordsLinked to original sources

Complementary metal oxide semiconductor cantilever arrays on a single chip: mass-sensitive detection of volatile organic compounds.

The sensing behavior of polymer-coated resonant cantilevers for mass-sensitive detection of volatile organic compounds was investigated. Industrial complementary metal oxide semiconductor (CMOS) technology combined with subsequent CMOS-compatible micromachining was used to fabricate a single-chip system comprising the transducers and all necessary driving and signal-conditioning circuitry. An analytical model was developed to describe the mass-sensing mechanism of polymer-coated resonant cantilevers. The model was validated by measurements of various gaseous analytes. As an exemplary application, the quantitative analysis of a binary mixture using an array of four cantilevers is described. Experimental results are given for the concentration prediction of a mixture of n-octane and toluene. Finally, it was established that the limit of detection achieved with cantilever sensors is comparable to that of other acoustic wave-based gas sensors.

Journal Article↗

A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible atomic force microscopy tip fabrication process and integrated atomic force microscopy cantilevers fabricated with this process.

A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible process for the fabrication of atomic force microscopy cantilevers with integrated tips has been developed. For the first time, the tips are fabricated after the completion of the regular complementary metal-oxide-semiconductor-field-effect-transistor fabrication process sequence. On-chip circuit components, such as piezoresistive deflection sensors, deflection actuators, and amplifiers, are fabricated on the mirror-polished surface of the wafer, ensuring optimal performance. The tip fabrication process is based on anisotropic silicon etching at low temperature using a tetramethylammonium hydroxide solution. The anisotropic etching process has been optimized to ensure process controllability. Using the described process, complementary-metal-oxide-semiconductor-field-effect-transistor-based cantilevers with piezoresistive deflection sensors and integrated tips have been successfully fabricated. Force-distance curves and scanning images in constant-force mode have been recorded.

Journal Article↗