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Biomedical subjects

Christopher L Soles

Publications and source records attributed to Christopher L Soles.

9 recordsLinked to original sources

Glass transition of miscible binary polymer-polymer thin films.

The average glass transition temperatures, Tg, of thin homopolymer films exhibit a thickness dependence, Tg(h), associated with a confinement effect and with polymer-segment-interface interactions. The Tg's of completely miscible thin film blends of tetramethyl bisphenol-A polycarbonate (TMPC) and deuterated polystyrene (dPS), supported by SiO(x)/Si, decrease with decreasing h for PS weight fractions phi >0.1. This dependence is similar to that of PS and opposite to that of TMPC thin films. Based on an assessment of Tg(h, phi), we suggest that the Tg(h, phi) of miscible blends should be rationalized, additionally, in terms of the notion of a self-concentration and associated heterogeneous component dynamics.

Elasticity↗

Real-time shape evolution of nanoimprinted polymer structures during thermal annealing.

The real-time shape evolution of nanoimprinted polymer patterns is measured as a function of annealing time and temperature using critical dimension small-angle X-ray scattering (CD-SAXS). Periodicity, line width, line height, and sidewall angle are reported with nanometer resolution for parallel line/space patterns in poly(methyl methacrylate) (PMMA) both below and above the bulk glass transition temperature (T(G)). Heating these patterns below T(G) does not produce significant thermal expansion, at least to within the resolution of the measurement. However, above T(G) the fast rate of loss in pattern size at early times transitions to a reduced rate in longer time regimes. The time-dependent rate of polymer flow from the pattern into the underlying layer, termed pattern "melting", is consistent with a model of elastic recovery from stresses induced by the molding process.

Computer Simulation↗

X-ray absorption spectroscopy to probe surface composition and surface deprotection in photoresist films.

Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) is utilized to provide insight into surface chemical effects in model photoresist films. First, NEXAFS was used to examine the resist/air interface including surface segregation of a photoacid generator (PAG) and the extent of surface deprotection in the film. The concentration of PAG at the resist-air interface was higher than the bulk concentration, which led to a faster deprotection rate at that interface. Second, a NEXAFS depth profiling technique was utilized to probe for compositional gradients in model resist line edge regions. In the model line edge region, the surface composition profile for the developed line edge was dependent on the post exposure bake time.

Journal Article↗

Control of moisture at buried polymer/alumina interfaces through substrate surface modification.

Moisture absorption in poly(4-tert-butoxycarbonyloxystyrene) (PBOCSt) films supported on Al(2)O(3) sputter coated silicon wafers is measured using neutron and X-ray reflectivity. Accumulation of water at the interface during moisture exposure results in an apparent film-thickness-dependent swelling for ultrathin PBOCSt films. The swelling of a film on Al(2)O(3) is less than the swelling of a film of the same thickness on SiO(x) for films thinner than 20 nm. This is due to comparatively less moisture accumulation at the Al(2)O(3)/PBOCSt interface. A simple, zero adjustable parameter model consisting of a fixed water-rich layer at the interface and bulk swelling through the remainder of the film describes the thickness-dependent swelling quantitatively. The influence of four different Al(2)O(3) surface treatments on the moisture distribution within PBOCSt films was examined: bare Al(2)O(3), tert-butylphosphonic acid, phenylphosphonic acid, and n-octyltrichlorosilane. Both the phenyl and the octyl surface treatments reduce the accumulation of water at the polymer/substrate interface. The tert-butyl treatment does not reduce the interfacial water concentration, presumably due to insufficient surface coverage.

Journal Article↗

Characterization of pore structure in a nanoporous low-dielectric-constant thin film by neutron porosimetry and X-ray porosimetry.

A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material with a random pore structure. Porosimetry experiments are conducted using a "contrast match" solvent (a mixture of toluene-d8 and toluene-h8) having the same neutron scattering length density as that of the nanoporous film matrix. The film is exposed to contrast match toluene vapor in a carrier gas (air), and pores fill with liquid by capillary condensation. The partial pressure of the solvent vapor is increased stepwise from 0 (pure air) to P0 (saturated solvent vapor) and then decreased stepwise to 0 (pure air). As the solvent partial pressure increases, pores fill with liquid solvent progressively from smallest to largest. SANS measurements quantify the average size of the empty pores (those not filled with contrast match solvent). Analogous porosimetry experiments using specular X-ray reflectivity (SXR) quantify the volume fraction of solvent adsorbed at each step. Combining SXR and SANS data yields information about the pore size distribution and illustrates the size dependence of the filling process. For comparison, the pore size distribution is also calculated by application of the classical Kelvin equation to the SXR data.

Journal Article↗

Interfacial effects on moisture absorption in thin polymer films.

Moisture absorption in model photoresist films of poly(4-hydroxystryene) (PHOSt) and poly(tert-butoxycarboxystyrene) (PBOCSt) supported on silicon wafers was measured by X-ray and neutron reflectivity. The overall thickness change in the films upon moisture exposure was found to be dependent upon the initial film thickness. As the film becomes thinner, the swelling is enhanced. The enhanced swelling in the thin films is due to the attractive nature of the hydrophilic substrate, leading to an accumulation of water at the silicon/polymer interface and subsequently a gradient in concentration from the enhancement at the interface to the bulk concentration. As films become thinner, this interfacial excess dominates the swelling response of the film. This accumulation was confirmed experimentally using neutron reflectivity. The water rich layer extends 25 +/- 10 A into the film with a maximum water concentration of approximately 30 vol %. The excess layer was found to be polymer independent despite the order of magnitude difference in the water solubility in the bulk of the film. To test if the source of the thickness dependent behavior was the enhanced swelling at the interface, a simple, zero adjustable parameter model consisting of a fixed water rich layer at the interface and bulk swelling through the remainder of the film was developed and found to reasonably correspond to the measured thickness dependent swelling.

Journal Article↗

Moisture absorption and absorption kinetics in polyelectrolyte films: influence of film thickness.

Specular X-ray reflectivity (XR) and quartz crystal microbalance (QCM) measurements were used to determine the absorption of water into thin poly(4-ammonium styrenesulfonic acid) films from saturated vapor at 25 degrees C. The effect of film thickness on the absorption kinetics and overall absorption was investigated in the range of thickness from (3 to 200) nm. The equilibrium swelling of all the films irrespective of film thickness was (0.57+/-0.03) volume fraction. Although the equilibrium absorption is independent ofthickness, the absorption rate substantially decreases for film thickness < 100 nm. For the thinnest film (3 nm), there is a 5 orders of magnitude decrease in the diffusion coefficient for water.

Journal Article↗

Fast dynamics and stabilization of proteins: binary glasses of trehalose and glycerol.

We present elastic and inelastic incoherent neutron scattering data from a series of trehalose glasses diluted with glycerol. A strong correlation with recently published protein stability data in the same series of glasses illustrates that the dynamics at Q >or= 0.71 A(-1) and omega > 200 MHz are important to stabilization of horseradish peroxidase and yeast alcohol dehydrogenase in these glasses. To the best of our knowledge, this is the first direct evidence that enzyme stability in a room temperature glass depends upon suppressing these short-length scale, high-frequency dynamics within the glass. We briefly discuss the coupling of protein motions to the local dynamics of the glass. Also, we show that T(g) alone is not a good indicator for the protein stability in this series of glasses; the glass that confers the maximum room-temperature stability does not have the highest T(g).

Glass↗

Direct measurement of the reaction front in chemically amplified photoresists.

The continuing drive by the semiconductor industry to fabricate smaller structures using photolithography will soon require dimensional control at length scales comparable to the size of the polymeric molecules in the materials used to pattern them. The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial resolution. However, nanometer-level control of this critical process is limited by the lack of direct measurements of the reaction front. We demonstrate the use of x-ray and neutron reflectometry as a general method to measure the spatial evolution of the reaction-diffusion process with nanometer resolution. Measuring compositional profiles, provided by deuterium-labeled reactant groups for neutron scattering contrast, we show that the reaction front within the material is broad rather than sharply defined and the compositional profile is altered during development. Measuring the density profile, we directly correlate the developed film structure with that of the reaction front.

Journal Article↗