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D A Drabold

Publications and source records attributed to D A Drabold.

4 recordsLinked to original sources

Maximum entropy and the problem of moments: a stable algorithm.

We present a technique for entropy optimization to calculate a distribution from its moments. The technique is based upon maximizing a discretized form of the Shannon entropy functional by mapping the problem onto a dual space where an optimal solution can be constructed iteratively. We demonstrate the performance and stability of our algorithm with several tests on numerically difficult functions. We then consider an electronic structure application, the electronic density of states of amorphous silica, and study the convergence of the Fermi level with increasing number of moments.

Journal Article↗

Spatial decay of the single-particle density matrix in insulators: analytic results in two and three dimensions.

Analytic results for the asymptotic decay of the electron density matrix in insulators have been obtained in all three dimensions (D = 1,2,3) for a tight-binding model defined on a simple cubic lattice. The anisotropic decay length is shown to be dependent on the energy parameters of the model. The existence of the power-law prefactor, proportional, variant r(-D/2), is demonstrated.

Journal Article↗

Electronic structure of glassy chalcogenides As4Se4 and As2Se3: a joint theoretical and experimental study.

We present an interpretation of the x-ray absorption spectra of arsenic chalcogenide glasses, As4Se4 and As2Se3, from a first-principles calculation. Our calculation identifies the atomistic origins of the observed photoemission data. The importance of structural "building blocks" present in a particular glass to the electron states is emphasized. The effects of disorder on the electronic spectra are clearly demonstrated by a significant change in the electronic density of states, originating in the breakdown of long-range order coherence in the bonding states of the building blocks. We discuss the relation between observed in situ light-induced changes and the electronic structure.

Journal Article↗

The structure of electronic states in amorphous silicon.

We illustrate the structure and dynamics of electron states in amorphous Si. The nature of the states near the gap at zero temperature is discussed and especially the way the structure of the states changes for energies ranging from midgap into either band tail (Anderson transition). We then study the effect of lattice vibrations on the eigenstates, and find that electronic states near the optical gap can be strongly influenced by thermal modulation of the atomic positions. Finally, we show the structure of generalized Wannier functions for amorphous Si, which are of particular interest for efficient ab initio calculation of electronic properties and forces for first principles dynamic simulation.

Electrons↗