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D D Awschalom

Publications and source records attributed to D D Awschalom.

14 recordsLinked to original sources
PubMed2003

Giant planar Hall effect in epitaxial (Ga,Mn)as devices.

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

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PubMed2003

Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation.

We present a scheme that enables gigahertz-bandwidth three-dimensional control of electron spins in a semiconductor heterostructure with the use of a single voltage signal. Microwave modulation of the Landé g tensor produces frequency-modulated electron spin precession. Driving at the Larmor frequency results in g-tensor modulation resonance, which is functionally equivalent to electron spin resonance but without the use of time-dependent magnetic fields. These results provide proof of the concept that quantum spin information can be locally manipulated with the use of high-speed electrical circuits.

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PubMed2002

Quantum information processing with large nuclear spins in GaAs semiconductors.

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference.

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PubMed2002

Infrared probe of itinerant ferromagnetism in Ga(1-x)Mn(x)As.

The doping and temperature dependence of the complex conductivity is determined for the ferromagnetic semiconductor Ga(1-x)Mn(x)As. A broad resonance develops with Mn doping at an energy scale of approximately 200 meV, well within the GaAs band gap. Possible origins of this feature are explored in the context of a Mn induced impurity band and intervalence band transitions. From a sum rule analysis of the conductivity data the effective mass of the itinerant charge carriers is found to be at least a factor of 3 greater than what is expected for hole doped GaAs. In the ferromagnetic state a significant decrease in the effective mass is observed, demonstrating the role played by the heavy carriers in inducing ferromagnetism in this system.

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PubMed2001

Electrical control of spin coherence in semiconductor nanostructures.

The processing of quantum information based on the electron spin degree of freedom requires fast and coherent manipulation of local spins. One approach is to provide spatially selective tuning of the spin splitting--which depends on the g-factor--by using magnetic fields, but this requires their precise control at reduced length scales. Alternative proposals employ electrical gating and spin engineering in semiconductor heterostructures involving materials with different g-factors. Here we show that spin coherence can be controlled in a specially designed AlxGa1-xAs quantum well in which the Al concentration x is gradually varied across the structure. Application of an electric field leads to a displacement of the electron wavefunction within the quantum well, and because the electron g-factor varies strongly with x, the spin splitting is therefore also changed. Using time-resolved optical techniques, we demonstrate gate-voltage-mediated control of coherent spin precession over a 13-GHz frequency range in a fixed magnetic field of 6 T, including complete suppression of precession, reversal of the sign of g, and operation up to room temperature.

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PubMed2001

Spintronics: a spin-based electronics vision for the future.

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

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PubMed2001

Ferromagnetic imprinting of nuclear spins in semiconductors.

We examine how a ferromagnetic layer affects the coherent electron spin dynamics in a neighboring gallium arsenide semiconductor. Ultrafast optical pump-probe measurements reveal that the spin dynamics are unexpectedly dominated by hyperpolarized nuclear spins that align along the ferromagnet's magnetization. We find evidence that photoexcited carriers acquire spin-polarization from the ferromagnet, and dynamically polarize these nuclear spins. The resulting hyperfine fields are as high as 9000 gauss in small external fields (less than 1000 gauss), enabling ferromagnetic control of local electron spin coherence.

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PubMed2001

Ultrafast manipulation of electron spin coherence.

A technique is developed with the potential for coherent all-optical control over electron spins in semiconductors on femtosecond time scales. The experiments show that optical "tipping" pulses can enact substantial rotations of electron spins through a mechanism dependent on the optical Stark effect. These rotations were measured as changes in the amplitude of spin precession after optical excitation in a transverse magnetic field and approach pi/2 radians. A prototype sequence of two tipping pulses indicates that the rotation is reversible, a result that establishes the coherent nature of the tipping process.

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PubMed2001

Persistent sourcing of coherent spins for multifunctional semiconductor spintronics.

Recent studies of n-type semiconductors have demonstrated spin-coherent transport over macroscopic distances, with spin-coherence times exceeding 100 ns; such materials are therefore potentially useful building blocks for spin-polarized electronics ('spintronics'). Spin injection into a semiconductor (a necessary step for spin electronics) has proved difficult; the only successful approach involves classical injection of spins from magnetic semiconductors. Other work has shown that optical excitation can provide a short (<500 ps) non-equilibrium burst of coherent spin transfer across a GaAs/ZnSe interface, but less than 10% of the total spin crosses into the ZnSe layer, leaving long-lived spins trapped in the GaAs layer (ref. 9). Here we report a 'persistent' spin-conduction mode in biased semiconductor heterostructures, in which the sourcing of coherent spin transfer lasts at least 1-2 orders of magnitude longer than in unbiased structures. We use time-resolved Kerr spectroscopy to distinguish several parallel channels of interlayer spin-coherent injection. The relative increase in spin-coherent injection is up to 500% in the biased structures, and up to 4,000% when p-n junctions are used to impose a built-in bias. These experiments reveal promising opportunities for multifunctional spin electronic devices (such as spin transistors that combine memory and logic functions), in which the amplitude and phase of the net spin current are controlled by either electrical or magnetic fields.

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PubMed2001

Magnetization measurements of magnetic two-dimensional electron gases.

We directly measure the magnetization of both the conduction electrons and Mn2+ ions in (Zn,Cd,Mn)Se two-dimensional electron gases (2DEGs) by integrating them into ultrasensitive micromechanical magnetometers. The interplay between spin and orbital energy in these magnetic 2DEGs causes Landau level degeneracies at the Fermi energy. These Landau level crossings result in novel features in the de Haas-van Alphen oscillations, which are quantitatively reproduced by a simple model.

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PubMed2001

Optical manipulation of nuclear spin by a two-dimensional electron gas.

Conduction electrons are used to optically polarize, detect, and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spin reveals a complete spectrum of optically induced and quadrupolar-split nuclear resonances, as well as evidence for Deltam = 2 transitions.

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PubMed2000

Coherent transfer of spin through a semiconductor heterointerface.

Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.

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PubMed1995

Classical and quantum magnetic phenomena in natural and artificial ferritin proteins.

Artificial ferritin has been synthesized with control of both the magnetic state (antiferromagnetic or ferrimagnetic) and the particle size over an ofer of magnitude in the number of iron atoms. The magnetic properties of the artificial ferritin were compared with those of natural horse spleen ferritin in a range of temperatures (20 millikelvin to 300 kelvin) and fields (1 nanotesla to 27 tesla). In the classical regime, the blocking temperature was found to correlate with the average particle size. A correlation was also observed in the quantum regime between the resonance frequency of macroscopic quantum tunneling of the Néel vector and the particle size. At high magnetic fields (to 27 tesla), a spin flop transition with a strong dependence on orientation was seen in the natural ferritin, providing evidence of antiferromagnetism in this system.

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