Type I band alignment in Si1-xGex/Si(001) quantum wells: photoluminescence under applied
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Biomedical subjects
DC Houghton
Publications and source records attributed to DC Houghton.
Ordered structures in SixGe1-x alloy thin films.
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Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation.
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Photoluminescence mechanisms in thin Si1-xGex quantum wells.
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Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during SixGe1-x epitaxy.
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Step-driven lateral segregation and long-range ordering during SixGe1-x epitaxial growth.
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Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon.
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Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells.
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Folded acoustic phonons in Si/GexSi1-x strained-layer superlattices.
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Raman scattering involving umklapp processes in Si/GexSi1-x superlattices.
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