Oxygen-oxygen complexes and thermal donors in silicon.
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Biomedical subjects
DJ Chadi
Publications and source records attributed to DJ Chadi.
Cation antisite defects and antisite-interstitial complexes in gallium arsenide.
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Vacancy complexes in GaAs: Effects on impurity compensation.
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Microscopic structure of hydrogen-shallow-donor complexes in crystalline silicon.
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Hydrogen bonding and diffusion in crystalline silicon.
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Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys.
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Chadi, Chang, and Walukiewicz reply.
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Diatomic-hydrogen-complex diffusion and self-trapping in crystalline silicon.
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First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfaces.
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Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys.
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Magic numbers for vacancy aggregation in crystalline Si.
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Metastability of the isolated arsenic-antisite defect in GaAs.
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Surface structure of As-stabilized GaAs(001): 2 x 4, c(2 x 8), and domain structures.
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Stoichiometry and surface reconstruction: An ab initio study of GaAs(100) surfaces.
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Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
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First-principles calculations of atomic and electronic structure of the GaAs(110) surface.
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Johnson, Herring, and Chadi reply.
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Stabilities of single-layer and bilayer steps on Si(001) surfaces.
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