Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001).
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Biomedical subjects
DK Biegelsen
Publications and source records attributed to DK Biegelsen.
Phosphine adsorption and decomposition on Si(100) 2 x 1 studied by STM.
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Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates.
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Arsine adsorption on Si(100) 2 x 1: A photoemission and scanning-tunneling-microscopy study.
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Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopy.
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Arsenic termination of the Si(110) surface.
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Atomic structure of the metastable c(4 x 4) reconstruction of Si(100).
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Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.
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Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy.
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Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
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Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.
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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
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Microscopic nature of coordination defects in amorphous silicon.
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Dangling or floating bonds in amorphous silicon?
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Detailed investigation of doping in hydrogenated amorphous silicon and germanium.
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Electron-nuclear double-resonance experiments in hydrogenated amorphous silicon.
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Hyperfine studies of dangling bonds in amorphous silicon.
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Identification of deep-gap states in a-Si:H by photo- depopulation-induced electron-spin resonance.
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