Valence-band offsets and formation enthalpy of reconstructed GaAs/Ge(001) interfaces.
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Biomedical subjects
DM Bylander
Publications and source records attributed to DM Bylander.
Good semiconductor band gaps with a modified local-density approximation.
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Huge electric fields in Ge/GaAs (001) and (111) superlattices and their effect on interfacial stability.
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4f resonances with norm-conserving pseudopotentials.
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Mixing enthalpy of the GaAs-AlAs random alloy: 64-atom supercell calculations.
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Ab initio calculations of magnetic states of a Mo monolayer.
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Nb2 dimer: Examination of singlet or triplet character.
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Pd2: A dimer with two Kohn-Sham triplet ground states.
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Failure of the transitivity rule for (GaAs)3/(Ge)6 (110) and (AlAs)3/(Ge)6 (110) superlattice valence-band offsets.
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Ab initio calculation of the mixing enthalpy of the GaAs-AlAs random alloy.
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Large interfacial charge density in unstrained GaAs-AlAs(111) superlattices.
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Dissociation energy of Mo2 and Mo2+
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Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfaces.
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Ab initio calculations of the cohesive energy of Mo and W and heat of formation of MoSi2 and WSi2.
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Ab initio (GaAs)3(AlAs)3 (001) superlattice calculations: Band offsets and formation enthalpy.
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Nonlocal Kohn-Sham exchange corrections to Si band gaps and binding energy.
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Hohenberg-Kohn kernel K(r-r').
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Self-consistent energy bands and formation energy of the (GaAs)1(AlAs)1(001) superlattice.
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