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Dongxue Chen

Publications and source records attributed to Dongxue Chen.

2 recordsLinked to original sources

Dimer-anticorrelation-induced stabilization of adsorbate clustering on the Si100-(2 x 1) surface.

It is well established that absorbate-absorbate interactions play a key role in determining the distribution of adsorbates on surfaces. In cases where these interactions are repulsive adsorbates frequently arrange so as to minimize these unfavorable interactions. This simple picture, however, neglects the influence of adsorption on the properties on the underlying substrate. Here, using STM, we show that on Si(100) many intrinsically repulsive adsorbates cluster to form surface patches even at low surface coverages. With the aid of density functional theory calculations and Monte Carlo simulations, we show that patch formation is an intrinsic property of the Si(100) surface that is driven by the energy lowering associated with the formation of extended regions of bare dimers. The enhanced attraction between anticorrelated tilted bare dimers is sufficient to offset the repulsions between adsorbates.

Journal Article↗

Spontaneous roughening: fundamental limits in Si(100) halogen etch processing.

A dynamical scanning tunneling microscopy and density functional theory study of the thermodynamic stability of halogen-terminated Si(100) surfaces is presented. Significant steric repulsion is shown to exist on all halogen-terminated Si(100) surfaces. This repulsion is the driving force for a roughening phenomenon, which is favored for all halogens except fluorine. Since roughening is an intrinsic property of these surfaces, it sets a lower bound on the atomic scale perfection that can be achieved using halogen etch processing.

Journal Article↗