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E Janzén

Publications and source records attributed to E Janzén.

18 recordsLinked to original sources
PubMed2006

Identification of the carbon antisite-vacancy pair in 4H-SiC.

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacancy pair in the negative charge state (C(Si)V-(C)) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.

Journal Article↗
PubMed2006

Divacancy in 4H-SiC.

Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly on three nearest C neighbors of the silicon vacancy, whereas it is negligible on the nearest Si neighbors of the carbon vacancy.

Journal Article↗
PubMed2001

Silicon antisite in 4H SiC.

Electron paramagnetic resonance spectrum with C(3V) symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si(C)). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si(C) is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si(C)(+) center indicates a considerable lattice relaxation in the vicinity of the defect.

Journal Article↗
PubMed1995

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