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F Evers

Publications and source records attributed to F Evers.

6 recordsLinked to original sources

Exact relations between multifractal exponents at the Anderson transition.

Two exact relations between mutlifractal exponents are shown to hold at the critical point of the Anderson localization transition. The first relation implies a symmetry of the multifractal spectrum linking the exponents with indices q<1/2 to those with q>1/2. The second relation connects the wave-function multifractality to that of Wigner delay times in a system with a lead attached.

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Surface criticality and multifractality at localization transitions.

We develop the concept of surface multifractality for localization-delocalization (LD) transitions in disordered electronic systems. We point out that the critical behavior of various observables related to wave functions near a boundary at a LD transition is different from that in the bulk. We illustrate this point with a calculation of boundary critical and multifractal behavior at the 2D spin quantum Hall transition and in a 2D metal at scales below the localization length.

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Universality of the edge-tunneling exponent of fractional quantum Hall liquids.

In a microscopic model of fractional quantum Hall liquids with electron-electron interactions and confinement, we calculate the edge Green's function via exact diagonalization. Our results for nu=1/3 and 2/3 suggest that, in the presence of Coulomb interaction, "external" parameters such as the sharpness of the edge and the strength of the edge confining potential, which can lead to edge reconstruction, may cause deviations from universality in the edge-tunneling I-V exponent. In particular, we do not find any direct dependence of this exponent on the range of the interaction potential as suggested by recent calculations in contradiction to the topological nature of the edge.

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Quasiclassical negative magnetoresistance of a 2D electron gas: interplay of strong scatterers and smooth disorder.

We study the quasiclassical magnetotransport of noninteracting fermions in two dimensions moving in a random array of strong scatterers (antidots, impurities, or defects) on the background of a smooth random potential. We demonstrate that the combination of the two types of disorder induces a novel mechanism leading to a strong negative magnetoresistance, followed by the saturation of the magnetoresistivity rho(xx)(B) at a value determined solely by the smooth disorder. Experimental relevance to the transport in semiconductor heterostructures is discussed.

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Fluctuations of the inverse participation ratio at the anderson transition

Statistics of the inverse participation ratio (IPR) at the critical point of the localization transition is studied numerically for the power-law random banded matrix model. It is shown that the IPR distribution function is scale invariant, with a power-law asymptotic "tail." This scale invariance implies that the fractal dimensions D(q) are nonfluctuating quantities, contrary to a recent claim in the literature. A recently proposed relation between D2 and the spectral compressibility chi is violated in the regime of strong multifractality, with chi-->1 in the limit D2-->0.

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