Si 2p core-level shifts at the Si(100)-SiO2 interface: An experimental study.
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Biomedical subjects
FR McFeely
Publications and source records attributed to FR McFeely.
Si/SiO2 interface: New structures and well-defined model systems.
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Breakdown of the semiclassical description of hot-electron dynamics in SiO2.
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Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission.
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Hot-electron dynamics in SiO2 studied by soft-x-ray-induced core-level photoemission.
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Soft-x-ray-induced core-level photoemission as a probe of hot-electron dynamics in SiO2.
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Low-energy-electron escape lengths in SiO2.
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Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110).
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Fluorine-silicon reactions and the etching of crystalline silicon.
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Microscopic structure of the SiO2/Si interface.
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Effect of sample doping level during etching of silicon by fluorine atoms.
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Chemical selectivity in photon-stimulated desorption of fluorine from silicon.
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Electronic structure of the CaF2/Si(111) interface.
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Formation of a new ordered structure of CaF2/Si(111) by ultraviolet irradiation.
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C 1s excitation studies of diamond (111). I. Surface core levels.
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C 1s excitation studies of diamond (111). II. Unoccupied surface states.
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