Biomedical subjects

G Lüpke

Publications and source records attributed to G Lüpke.

16 recordsLinked to original sources

PubMed2006

Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors.

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

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PubMed2005

Interface magnetization reversal and anisotropy in Fe/AlGaAs(001).

The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures.

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PubMed2004

Ultrafast photoinduced reflectivity transients in doped manganite.

The temperature and magnetic field dependence of ultrafast photoinduced spin and quasiparticle relaxation dynamics is reported in La(0.67)Ca(0.33)MnO(3) and LaMnO(3) single crystals and thin films. Both manganites reveal an unusually slow ( approximately 10 micros) carrier relaxation process attributed to the spin-lattice relaxation in localized states. The quasiparticle dynamics is governed by the temperature- and magnetic field-dependent pseudogap in La(0.67)Ca(0.33)MnO(3), and by the temperature-independent Jahn-Teller gap in LaMnO(3). The loss of spectral weight near the Fermi level in La(0.67)Ca(0.33)MnO(3) strongy affects the quasiparticle relaxation dynamics as temperature increases from below T(C). Our results show that the coupled dynamics of charge, spin and lattice is strongly correlated with the distinct gap structures in these manganites.

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PubMed2004

Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium.

Decay dynamics of local vibrational modes provides unique information about energy relaxation processes to solid-state phonon bath. In this Letter the lifetimes of the asymmetric stretch mode of interstitial 16O and 17O isotopes in Si are measured at 10 K directly by time-resolved, transient bleaching spectroscopy to be 11.5 and 4.5 ps, respectively. A calculation of the three-phonon density of states shows that the 17O mode lies in the highest phonon density resulting in the shortest lifetime. The lifetime of the 16O mode in Ge is measured to be 125 ps, i.e., approximately 10 times longer than in Si. The interaction between the local modes and the lattice vibrations is discussed according to the activity of phonon combinations.

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PubMed2002

Structure-dependent vibrational lifetimes of hydrogen in silicon.

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.

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PubMed2001

Lifetimes of hydrogen and deuterium related vibrational modes in silicon.

Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.

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PubMed1996