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G Möbus

Publications and source records attributed to G Möbus.

4 recordsLinked to original sources

Cerium and boron chemistry in doped borosilicate glasses examined by EELS.

Spatially resolved measurements of boron coordination and cerium valency in a doped borosilicate glass with crystalline nano-precipitates are described. The fine structure of the boron K-edge and the white-line ratio of the cerium M-edge doublet were evaluated from EELS line scans. Due to high beam sensitivity it was found that reliable boron-coordination measurements in some of the glasses studied required extrapolation of results acquired after different periods of irradiation back to a zero-irradiation. However, borosilicates that contained heavy alkali atoms were found to suffer very little structural change. The Ce valency of a 4% (molar) doped alkali-borosilicate glass was found to be mixed +III/+IV in the glass matrix and purely +IV (indicative of CeO2) in the precipitates. A significant dependency of the valence results on the data processing method was found and explained.

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Probability calculus for quantitative HREM. Part I: Monte-Carlo and point cloud techniques.

A new approach to a central question of modern high-resolution electron microscopy (1-IREM) is presented: How precisely can we locate atom positions in crystal defects using computer-controlled structure retrieval algorithms? The purpose is not just to give error bars for the determined atomic column positions, but to derive estimations for the continuous probability functions. In the first part of this two-part paper, we present techniques which analyse point clouds of fluctuating fit-results for atom coordinates. The point clouds are obtained in a first approach from multiple input images differing in noise, commonly known as Monte-Carlo error estimation. Furthermore, we exploit the response obtained during a global optimisation-based refinement process for which all the trial structures are evaluated resulting in a second type of point cloud. In comparison, the Monte-Carlo-type technique turns out to be the most robust one. Using examples from current research on SrTiO3-bicrystals and Cu-Al2O3 interfaces, we study two largely different crystallographic and statistical situations.

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Probability calculus for quantitative HREM. Part II: entropy and likelihood concepts.

The technique of extracting atomic coordinates from HREM images by R-factor refinement via iterative simulation and global optimisation is described in the context of probability density estimations for unknown parameters. In the second part of this two-part paper we discuss in comparison maximum likelihood and maximum entropy techniques with respect to their suitability of application within HREM. We outline practical difficulties of likelihood estimation and present a synthesis of two point-cloud techniques as a recommendable solution. This R-factor refinement with independent Monte-Carlo error calibration is a highly versatile method which allows adaptation to the special needs of HREM. Unlike simple text-book estimation methods, there is no requirement here on the noise being additive, uncorrelated, or Gaussian. It also becomes possible to account for a subset of systematic errors.

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Direct versus iterative structure retrieval for a Cu/Ti misfit dislocation: a comparison of various 1Å HREM technologies.

Using an interface between Cu/Ti as an example, two HREM-based image analysis techniques, strain mapping and iterative digital image matching, are compared. The validity limit of these techniques is discussed as a function of specimen thickness and microscope technology. Two criteria are used to assess the limits: (i) the difference between two geometric phase maps, one calculated in image plane and one in object plane, and (ii) a difference image from two HREM simulations of two structure models differing in one atomic column. The latter displays the overall delocalisation of information by the microscope due to diffraction and imaging. It is outlined how far images and strain maps, obtained for high-voltage microscopy at 1250 kV and CS correction at 200 kV, are identical. Both techniques exhibit a significantly increased regime of applicability of strain mapping near defect cores. Simulations for a 400 kV HREM and a 300 kV FEGTEM with and without focal series reconstruction complement the study.

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