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G Radtke

Publications and source records attributed to G Radtke.

At least 19 recordsLinked to original sources

Electron inelastic scattering and anisotropy: The two-dimensional point of view.

The measurement of the electronic structure of anisotropic materials using energy loss near edge structure (ELNES) spectroscopy is an important field of microanalysis in transmission electron microscopy. We present a novel method to study the angular dependence of electron inelastic scattering in anisotropic materials. This method has been applied to the study of 1s-->pi* and sigma* transitions on the carbon K edge in pyrolitic graphite. An excellent agreement between experimental and theoretical two-dimensional scattering patterns has been found. In particular, the need of a fully relativistic calculation of the inelastic scattering cross-section to explain the experimental results is demonstrated.

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N-K ELNES study of anisotropy effects in hexagonal AlN.

Anisotropic effects in hexagonal aluminium nitride have been studied by electron energy-loss spectroscopy (EELS) in the N-K energy loss near edge structure (ELNES). Experimental data acquired with different collection angles and with a nearly parallel incident electron beam aligned along the c-axis have been compared to simulations based on ab initio calculations. The extraction of intrinsic parallel I|| (with momentum transfer q || c axis) and perpendicular I perpendicular (with momentum transfer q perpendicular c axis) components has been performed directly from the experimental spectra. This has been done according to their description as linear combinations of I|| and I perpendicular, with adequate weights deduced from a geometrical model of anisotropic behaviour.

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Electron spectroscopy imaging to study ELNES at a nanoscale.

Series of energy-filtered TEM images have been acquired with very narrow energy slit using a post-column energy filter. This allowed us to reconstruct spectra with an energy resolution estimated to 2 eV, and a spatial resolution in the order of 0.5 nm. In that way, fine structures of the N-K edge in AlN/GaN heterostructures have been investigated and compared to EELS spectra. The fine structure in the two nitrides is very sensitive to the local environment. Very good agreement between ESI and EELS spectra was found. Moreover, this technique allowed analysis of the AlN/GaN interface at a nanoscale. The second example is an application of the technique to construct bonding maps. In this case, maps differentiating AlN nanoprecipitates with either the cubic or the hexagonal phase were created.

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