Vacancy-model interpretation of EPR spectrum of Si:Pt-
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Biomedical subjects
GD Watkins
Publications and source records attributed to GD Watkins.
Absence of dichroism for the DX optical-bleaching transients in Al0.35Ga0.65As:Te.
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Structure of gold in silicon.
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Optically detected electron-nuclear double resonance of S=1 states of defects in semiconductors: PGa-YP in GaP.
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Optical detection of electron-nuclear double resonance for an S=1 luminescent center in GaP:O.
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EPR identification of the single-acceptor state of interstitial carbon in silicon.
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Bistable interstitial-carbon-substitutional-carbon pair in silicon.
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Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair.
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Optical detection of electron-nuclear double resonance for a donor in oxygen-doped GaP.
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Direct measurement of exchange as a function of separation for discrete donor-acceptor pairs in ZnSe.
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Bistable defect in silicon: The interstitial-carbon-substitutional-carbon pair.
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Relationship between the pseudo-Jahn-Teller effect and chemical rebonding.
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Negative-U defect: Interstitial boron in silicon.
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Determination of the PIn antisite structure in InP by optically detected electron-nuclear double resonance.
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Optically detected magnetic-resonance observation of the isolated zinc interstitial in irradiated ZnSe.
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Observation by optically detected magnetic resonance of Frenkel pairs in irradiated ZnSe.
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Optically detected magnetic resonance of nonradiative recombination via the AsGa antisite in p-type GaAs.
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New vacancy-related defects in n-type silicon.
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