Ion-beam processing of silicon at keV energies: A molecular-dynamics study.
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Biomedical subjects
GH Gilmer
Publications and source records attributed to GH Gilmer.
Ab initio pseudopotential calculations of B diffusion and pairing in Si.
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Kinetics of nucleation-dominated step flow.
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Monte Carlo simulation of the rapid crystallization of bismuth-doped silicon.
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Enhanced Step Waviness on SiGe(001)-(2 x 1) Surfaces under Tensile Strain.
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Structural transformations and defect production in ion implanted silicon: a molecular dynamics simulation study.
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Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain.
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Growth of germanium films on Si(001) substrates.
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Maximum concentration of impurities in semiconductors.
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Epitaxy on surfaces vicinal to Si(001). I. Diffusion of silicon adatoms over the terraces.
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Epitaxy on surfaces vicinal to Si(001). II. Growth properties of Si(001) steps.
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Binding sites and diffusion barriers of single-height Si(001) steps.
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Analysis of molecular-dynamics simulations of the (111) surface of germanium crystal near its bulk melting temperature.
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Selection of lamellar thickness in polymer crystal growth: A rate-theory model.
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Thermodynamic criteria for grain-boundary melting; A molecular-dynamics study.
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Rate-theory model of polymer crystallization.
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Dynamical properties of long-wavelength interface fluctuations during nucleation-dominated crystal growth.
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