Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial Silicon.
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Biomedical subjects
GV Hansson
Publications and source records attributed to GV Hansson.
Hall factor in strained p-type doped Si1-xGex alloy.
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Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers.
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Fermi-edge singularity in p-type modulation-doped SiGe quantum wells.
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Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.
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Temperature-induced manipulation of nucleation during Si and Ge molecular-beam epitaxy.
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delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy.
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Analysis of resonant-tunneling transport.
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Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy.
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Surface-state band structure of the Si(100)2 x 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces.
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Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy.
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Symmetry properties and band structure of surface states on the single-domain, hydrogen-chemisorbed Si(100)2 x 1:H surface.
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New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces.
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Surface electronic structure of Si(111)7 x 7-Ge and Si(111)5 x 5-Ge studied with photoemission and inverse photoemission.
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Si(111)7 x 7-Ge and Si(111)5 x 5-Ge surfaces studied with angle-resolved photoemission.
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Photoemission study of the surface states that pin the Fermi level at Si(100)2 x 1 surfaces.
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Surface electronic structure of GaAs(110)1 x 1-Sb studied with angle-resolved photoelectron spectroscopy.
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New surface states on the annealed Ge(111) surface.
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