Biomedical subjects
Publications and source records attributed to Gyeong S Hwang.
Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.
In this paper, we propose a new adsorption model for molecular oxygen on reduced TiO2(110), based on extensive first principles density functional calculations. For the first time, our calculations predict formation of tetraoxygen (O4) anchored at the vacancy site, which in turn allows adsorption of three O2 molecules per vacancy in saturation coverage. We present the structure, bonding, and energetics of adsorbed oxygen species by changing the number of adsorbed oxygen molecules per vacancy. We also find that thermally activated O2 desorption may take place via two channels that require overcoming barriers of 0.41 and 1.25 eV, respectively. In addition, our study provides strong theoretical evidence for the change in O2 reactivity with O2 coverage. Our findings associated with tetraoxygen complexes are consistent with existing experimental results.
First principles periodic slab calculations based on gradient-corrected density functional theory have been performed to investigate CO oxidation on rutile TiO2(110) at varying O2 coverages (theta = 1, 2, and 3, where theta is defined as the number of O2 per oxygen vacancy). For each coverage we only present the reaction of CO with oxygen species in the most stable configuration. Our results show a significant variation in the oxidation activation energy with O2 coverage.
Atomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable due to the high tensile strains induced, thereby undergoing thermally activated transformation with a moderate barrier into other stable configurations including dicoordinated silicon, silanone, or a subsurface Si-Si dimer, depending on the local surface structure. Pathways for the interconversion between these oxygen-vacancy-related defects are presented with a discussion of their viability.
Using density functional theory slab calculations, we have investigated (i) the origin of nonlocal interactions occurring in the adsorption of small polar molecules (H2O,NH3,CH3OH,CH3NH2) on the clean Si(001)-2 x 1 surface and (ii) the nonlocal effects on two-dimensional arrangement of adsorbates. Our results show the adsorption properties are significantly altered in the presence of adsorbates on an adjacent dimer along a row. We have identified that the coverage dependent behavior arises from a combination of (i) surface polarization change, (ii) adsorbate-induced charge delocalization, (iii) adsorbate-adsorbate repulsion, and (iv) hydrogen bonding. The nucleophilic-electrophilic molecular adsorption involves charge delocalization to neighboring dimers along a row, which in turn undermines molecular adsorption on the neighboring dimers. Nonlocal effects associated with polar interactions with neighboring dimers and adsorbates vary with adsorption system. While such polar interactions are unimportant in CH3OH adsorption, hydrogen bonding and adsorbate-adsorbate repulsion play an important role in determining the adsorption structures of H2O and NH3CH3NH2, respectively. In addition, the electrostatic attraction with the buckled-up Si atoms of adjacent dimers contributes to stabilization of H2O, NH3, and CH3NH2 adsorption. We also discuss kinetic effects on two-dimensional ordering of adsorbates, in conjunction with surface phase transition and adsorption-dissociation rates.
We propose a novel mechanism for the diffusion of a diboron pair in Si, based on first principles density functional theory. We find a reaction pathway along which the boron pair diffuses from one lowest energy configuration of [B-B](s)-< 001> to an equivalent structure at an adjacent equivalent site through three local minimum states denoted as [B-B](s)-< 111>, B(s)-B (i), and B(s)-B (s)-Si (i). The activation energy for the diffusion is estimated to be 1.81 eV in the generalized gradient approximation. A kinetic model suggests that the diboron diffusion plays an important role in determining diffusion profiles during ultrashallow junction processing (which requires high boron-dopant concentration as well as high annealing temperature).