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H W Zandbergen

Publications and source records attributed to H W Zandbergen.

At least 19 recordsLinked to original sources

Angular and local spectroscopic analysis to probe the vertical alignment of N-doped well-separated carbon nanotubes.

Vertically aligned well-separated N-doped multiwalled carbon nanotubes (CNTs) were grown on a silicon substrate by plasma enhanced chemical vapor deposition (PECVD). Angular near-edge X-ray absorption fine structure (NEXAFS) was used to investigate the vertical alignment of as-grown CNTs. In addition, both individual tubes and tube bundles were characterized by high-resolution electron energy loss spectroscopy (HREELS). Simultaneous analysis of both spectroscopic techniques provides information on chemical environment, orbital orientation between carbon and heteroatoms, and local curvature effects. We demonstrate the utility of NEXAFS as an in situ probe of CNTs.

Letter↗

Enhancement of resolution in core-loss and low-loss spectroscopy in a monochromated microscope.

The significant enhancement of the energy resolution in the new generation of commercially available monochromated transmission electron microscopes presents new challenges in term of selecting the correct experimental conditions and understanding the various effects that can potentially influence the quality of the EELS data. In this respect we investigated the effect of point spread function of the detector and spectrum-diffraction mixing on the energy resolution and the intensity of the zero loss peak tails. Alternative approaches to improve the energy resolution by mathematical methods have been tested. By using a simple and commonly available test case (Si L(2,3) edges) we assessed the efficiency of the deconvolution algorithms to improve the resolution. The results show that the deconvolution is not always successful in improving the resolution of the core loss EELS data and the results may not always be reliable. Contrary to this, the application of the Richardson-Lucy deconvolution algorithm on some bandgap measurements data appears to be very effective. The procedure proved successful in removing the contribution of the zero-loss peak tails and allows an easier access to spectroscopic information starting at energy losses as low as of 0.5 eV with monochromated spectra and 1 eV with the non-monochromated spectra.

Journal Article↗

Atomic pillar-based nanoprecipitates strengthen AlMgSi alloys.

Atomic-resolution electron microscopy reveals that pillarlike silicon double columns exist in the hardening nanoprecipitates of AlMgSi alloys, which vary in structure and composition. Upon annealing, the Si2 pillars provide the skeleton for the nanoparticles to evolve in composition, structure, and morphology. We show that they begin as tiny nuclei with a composition close to Mg2Si2Al7 and a minimal mismatch with the aluminum matrix. They subsequently undergo a one-dimensional growth in association with compositional change, becoming elongated particles. During the evolution toward the final Mg5Si6 particles, the compositional change is accompanied by a characteristic structural change. Our study explains the nanoscopic reasons that the alloys make excellent automotive materials.

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Image deconvolution in spherical aberration-corrected high-resolution transmission electron microscopy.

The method of image deconvolution developed previously for FEG high-resolution transmission electron microscope (HRTEM) without a spherical aberration (C(s)) corrector was for the first time applied to FEG HRTEM with a C(s)-corrector. The principle and the procedure of image deconvolution are briefly described. Four qualified [1 1 0] images of Si were selected from a through-focus series to perform image deconvolution. The projected potential is successfully derived from all the images, and the obtained "dumbbell" structure maps of Si [1 1 0] are in good agreement with the calculated potential map. The criterion of selecting qualified images for performing image deconvolution is indicated. The possibility of applying image deconvolution to defect study and to ab initio crystal structure determination is discussed.

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Cerenkov losses: a limit for bandgap determination and Kramers-Kronig analysis.

Measuring low energy losses in semiconductors and insulators with high spatial resolution becomes attractive with the increasing availability of modern transmission electron microscopes (TEMs) equipped with monochromators, C(s) correctors and energy filters. In this paper, we demonstrate that Cerenkov losses pose a limit for the interpretation of low energy loss spectra (EELS) in terms of interband transistions and bandgap determination for many materials. If the velocity of a charged particle in a medium exceeds the velocity of light, photons are emitted leading to a corresponding energy loss of a few electronvolt. Since these losses are strong for energies below the onset of interband transitions, they change the apparent loss function of semiconductors and insulators, with the risk of erroneous interpretation of spectra. We measured low energy losses of Si and GaAs with a monochromated TEM demonstrating the effect of sample thickness on Cerenkov losses. Angle resolved EELS and energy filtered diffraction patterns (taken without a monochromator) show the extremely narrow angular distribution of Cerenkov losses. The latter experiment provides a method that allows to decide whether Cerenkov radiation masks the very low loss signal in EELS.

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Translocation of double-strand DNA through a silicon oxide nanopore.

We report double-strand DNA translocation experiments using silicon oxide nanopores with a diameter of about 10 nm . By monitoring the conductance of a voltage-biased pore, we detect molecules with a length ranging from 6557 to 48 500 base pairs. We find that the molecules can pass the pore both in a straight linear fashion and in a folded state. Experiments on circular DNA further support this picture. We sort the molecular events according to their folding state and estimate the folding position. As a proof-of-principle experiment, we show that a nanopore can be used to distinguish the lengths of DNA fragments present in a mixture. These experiments pave the way for quantitative analytical techniques with solid-state nanopores.

Biocompatible Materials↗

Crystallographic analysis of thin specimens.

Electron backscattering diffraction (EBSD) is commonly used on bulk samples for crystallographic material characterization. In this work, the technique was applied on transmission electron microscopy (TEM)-type thin specimens, prepared with a focused ion beam. Orientation maps were successfully collected on specimens made of a Cu3Au copper-gold alloy. As compared to EBSD analysis on a bulk specimen, an improved pattern quality and a high spatial resolution (well below 10 nm) were obtained. Furthermore, a clear improvement of the signal-to-noise ratio with decreasing sample thickness was observed.

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Charge ordering, commensurability, and metallicity in the phase diagram of the layered NaxCoO2.

The phase diagram of nonhydrated NaxCoO2 has been determined by changing the Na content x using a series of chemical reactions. As x increases from 0.3, the ground state goes from a paramagnetic metal to a charge-ordered insulator (at x=1/2), then to a "Curie-Weiss metal" (around 0.70), and finally to a weak-moment magnetically ordered state (x>0.75). The unusual properties of the state at 1/2 (including particle-hole symmetry at low T and enhanced thermal conductivity) are described. The strong coupling between the Na ions and the holes is emphasized.

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Atomic imaging in aberration-corrected high-resolution transmission electron microscopy.

In recent years, the successful implementation of a spherical-aberration corrector in a Philips CM 200 FEG ST microscope achieved by Haider et al. has attracted a great deal of attention. However, thus far extensive applications of this novel high-resolution transmission electron microscope (HRTEM) to materials research have been hampered by the problems concerning optimum imaging conditions and image interpretation. In this paper, we present our points of view concerning atomic imaging in an aberration-corrected HRTEM. Since atomic resolution images can also be obtained with other techniques such as through-focus exit-wave function reconstruction (TF-EWR), we have to emphasis that the strength of the aberration-corrected HRTEM particularly lies on its ability to resolve the atomic structure in real time. However, for this purpose it is mandatory that the image contrast be related in a one-to-one function with the projected structure of the object. We analyzed the atomic imaging conditions in much detail and we come to the following conclusion: this novel facility is no doubt a powerful and advanced HRTEM instrument in achieving atomic images with its highest resolution (information limit). We furthermore demonstrate that the combination of the new microscope and TF-EWR will yield optimal results.

Journal Article↗

The effect of inelastic scattering on crystal structure refinement from electron diffraction patterns recorded under almost parallel illumination.

Recently a number of crystal structures were determined using electron diffraction data with an almost parallel electron beam. In many cases no energy filtering was applied. On the other hand, the contrast in convergent beam electron diffraction patterns is greatly improved by energy filtering of the electrons. To investigate whether energy filtering will improve the accuracy of the structure analysis from diffraction data recorded under an almost parallel beam condition, we recorded diffraction patterns of the [100] zone of YBa(2)Cu(3)O(7) using unfiltered electrons, zero-loss electrons and plasmon-loss electrons, respectively. Subsequently, the structure is refined based on these different electron diffraction datasets, using the program MSLS (Acta Crystallogr. A 54 (1998) 91). The results show that the obtained atomic positions are not significantly different for the chosen filter conditions. Even with amorphous carbon deposited on the specimen, which will cause a significant increase (>40 times) of energy-loss electrons, the structure refinement led to the same atomic positions.

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Investigation of hexagonal and cubic GaN by high-resolution electron energy-loss spectroscopy and density functional theory.

High-resolution electron energy-loss spectroscopy in a transmission electron microscope is a very powerful method for the study of electronic structure of materials. The fine structure of Ga L(2,3) and N ionization edges in c-GaN and h-GaN was studied using a TEM equipped with a monochromator and high-resolution energy spectrometer. The experimental results were compared with the results of calculation based on the density functional theory using the Wien2k code and show that the best fit is achieved when the core hole effect is taken into account. The effect of the core hole value and the supercell size on the energy-loss near-edge structure have been investigated. A different behaviour was found for c-GaN and h-GaN: better agreement is obtained for a 0.5 core hole for h-GaN and for a full core hole for c-GaN. The anisotropic behaviour of the experimental spectra and calculated spectra for h-GaN have been studied and the "magic" angle was determined.

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Application of the dual-beam FIB/SEM to metals research.

The dual-beam microscope is a combination of a focused ion beam with an electron beam. The instrument used in this work is also equipped with an energy-dispersive X-ray system for local elemental analysis. This powerful tool gives access to specific features inside a material. Two different applications are presented in this paper: (1) cross-sections and transmission electron microscope specimens cut in order to investigate the interface between an aluminium substrate and its epoxy coating; and (2) a grain boundary in a Cu(3)Au alloy. In both cases, the dual beam succeeded where other methods failed.

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Materials science applications of HREELS in near edge structure analysis and low-energy loss spectroscopy.

New experiments made possible with a commercial transmission electron microscope (TEM) equipped with a high-resolution electron energy loss spectrometer (EELS) are presented. With this commercial system, a 100 meV energy resolution using a sub 2 nm probe or 500 meV at a 0.20 nm probe are possible, in combination with other modern techniques available for TEMs. In this paper a number of explorative examples of the first results are shown. The benefit of the increased resolution for detecting more details in near edge structures are shown for the Ti K edge in TiO(2) (brookite) and for the N K edge in cubic and hexagonal GaN. The bandgap of GaN is studied in both crystal structures, as well as the dependency of the low-loss spectrum on the momentum transfer direction in diffraction mode.

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High resolution EELS using monochromator and high performance spectrometer: comparison of V2O5 ELNES with NEXAFS and band structure calculations.

Using single crystal V2O5 as a sample, we tested the performance of the new aberration corrected GATAN spectrometer on a monochromatised 200 kV FEG FEI (S)TEM. The obtained V L and O K ELNES were compared with that obtained in a common GATAN GIF and that in the new spectrometer, without monochromatised beam. The performance of the new instrumentation is impressive: recorded with an energy-resolution of 0.22 eV, the V L(3) edge reveals all the features due to the bulk electronic structure, that are also revealed in near-edge X-ray absorption fine structure (NEXAFS) with a much higher energy-resolution (0.08 eV). All features of the ELNES and NEXAFS are in line with a theoretical spectrum derived from band-structure calculations.

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Fabrication of solid-state nanopores with single-nanometre precision.

Single nanometre-sized pores (nanopores) embedded in an insulating membrane are an exciting new class of nanosensors for rapid electrical detection and characterization of biomolecules. Notable examples include alpha-hemolysin protein nanopores in lipid membranes and solid-state nanopores in Si3N4. Here we report a new technique for fabricating silicon oxide nanopores with single-nanometre precision and direct visual feedback, using state-of-the-art silicon technology and transmission electron microscopy. First, a pore of 20 nm is opened in a silicon membrane by using electron-beam lithography and anisotropic etching. After thermal oxidation, the pore can be reduced to a single-nanometre when it is exposed to a high-energy electron beam. This fluidizes the silicon oxide leading to a shrinking of the small hole due to surface tension. When the electron beam is switched off, the material quenches and retains its shape. This technique dramatically increases the level of control in the fabrication of a wide range of nanodevices.

Crystallization↗

Orbital ordering transition in La4Ru2O10.

We report experimental evidence for a full orbital ordering transition in the two-dimensional lanthanum ruthenate La4Ru2O10. The observable consequences of this orbital ordering include the loss of the Ru local moment, a structural distortion which partitions Ru-O bonds into axially oriented short and long sets, a sharp jump in electrical resistivity, and the opening of a spin gap that is visible in neutron scattering experiments. This is a rare example of a discrete orbital ordering transition in a 4d transition metal oxide and demonstrates that orbital effects can have an influence on the properties of layered ruthenates, a family of compounds that notably includes the p-wave superconductor Sr2RuO4 and the field-tuned quantum critical metamagnet Sr3Ru2O7.

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Determination of absolute configurations of crystal structures using electron diffraction patterns by means of least-squares refinement.

A simple method is reported to determine the absolute configuration of the crystal structure from electron diffraction patterns taken from very small areas. The method is based on the differences in the Friedel reflections, which are in general much larger than for X-rays due to the dynamical behaviour of the electron scattering. We express the absolute configuration with a parameter similar to the one Flack (Acta Cryst. A 39 (1983) 876) introduced in X-ray crystallography. This parameter is added to a refinement procedure that uses a multi-slice calculation to calculate diffraction patterns. The validity and strength of the method are shown with simulated and experimental data sets of GaN in the [0 1 0]-zone and a more complex compound, Ce5Cu19P12 in the [0 0 1] zone.

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Superconductivity in the non-oxide perovskite MgCNi3.

The interplay of magnetic interactions, the dimensionality of the crystal structure and electronic correlations in producing superconductivity is one of the dominant themes in the study of the electronic properties of complex materials. Although magnetic interactions and two-dimensional structures were long thought to be detrimental to the formation of a superconducting state, they are actually common features of both the high transition-temperature (Tc) copper oxides and low-Tc material Sr2RuO4, where they appear to be essential contributors to the exotic electronic states of these materials. Here we report that the perovskite-structured compound MgCNi3 is superconducting with a critical temperature of 8 K. This material is the three-dimensional analogue of the LnNi2B2C family of superconductors, which have critical temperatures up to 16 K (ref. 2). The itinerant electrons in both families of materials arise from the partial filling of the nickel d-states, which generally leads to ferromagnetism as is the case in metallic Ni. The high relative proportion of Ni in MgCNi3 suggests that magnetic interactions are important, and the lower Tc of this three-dimensional compound-when compared to the LnNi2B2C family-contrasts with conventional ideas regarding the origins of superconductivity.

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