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H Wendrock

Publications and source records attributed to H Wendrock.

2 recordsLinked to original sources

Stereological analysis and modelling of gradient structures

Gradient structures are inhomogeneous along a particular gradient direction but homogeneous perpendicular to that direction. Consequently, structural parameters such as volume fraction or surface area density are local characteristics which depend on the 'vertical' coordinate with respect to the 'vertical' gradient axis. Analogously, models for gradient structures have model parameters depending on the vertical coordinate z. For example, a Voronoi tessellation with a gradient is generated by a gradient point process with a local intensity which is a function of z. Similarly, a gradient germ grain model is obtained from a gradient point process where the grain size distribution may also depend on z. For a gradient Boolean model, local volume fraction VV(z) and local surface area density SV(z) can be calculated from the model parameters. Stereological methods for gradient structures are based on vertical sections parallel to the gradient direction. Estimation of VV(z), SV(z) and local length density LV(z) is done by lineal analysis using horizontal test lines with vertical coordinate z. Similarly, lineal analysis is used to estimate local mean cell volume of gradient tessellations. For the estimation of local particle number density and size in the spirit of the Wicksell problem the use of kernel methods and distributional assumptions is required.

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Characterization of ultra smooth interfaces in Mo/Si-multilayers.

The interface structure of Mo/Si-multilayers prepared by Pulsed Laser Deposition (PLD) on Si substrates at room temperature has been investigated. Already the in-situ ellipsometer data acquired during film growth indicate a particular behaviour of this material system that is caused by reaction/diffusion processes of the condensing atoms. MoSi(x) interlayers are formed both at the Mo on Si- and at the Si on Mo-interfaces. The results of multilayer characterization carried out by SNMS and RBS show similar concentration profiles for both types of the interlayers. More detailed information about interface structure and morphology can be provided by HREM investigations. In the TEM micrographs of various multilayers prepared for different laser light wavelengths an improvement of layer stack quality, i.e. formation of abrupt interfaces, with increasing photon energy is observed. Layer stacks having almost ideally smooth interfaces were synthesized by UV-photon ablation. HREM micrographs of these multilayers show a pronounced separation of spacer and absorber layers. The roughness sigma(R) of the interfaces between the amorphous Si- and MoSi(x)-layers was determined by image analysis. On the average a level sigma(R) approximately 0.1 nm is found. There is no indication for roughness replication or amplification from interface to interface as it is known from the appropriate products of conventional thin film technologies.

Journal Article↗