Boron diffusion in strained Si1-xGex epitaxial layers.
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Biomedical subjects
HS Luftman
Publications and source records attributed to HS Luftman.
Maximum concentration of impurities in semiconductors.
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Electrical conduction in the Si(111):B-( sqrt 3 x sqrt 3 )R30 degrees/a-Si interface reconstruction.
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Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth.
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