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Henning Sirringhaus

Publications and source records attributed to Henning Sirringhaus.

9 recordsLinked to original sources
PubMed2006

Surface tension and fluid flow driven self-assembly of ordered ZnO nanorod films for high-performance field effect transistors.

Colloidal nanorods of inorganic semiconductors are of interest for a range of optoelectronic devices. The ability to self-assemble these materials into ordered arrays by solution-processing techniques is crucial for achieving adequate device performance. Here we show that uniform ZnO nanorod films with defined nanorod alignment can be solution-deposited over large areas by controlling the surface energy of the nanorods through the choice of suitable ligands and by the fluid flow direction during growth. ZnO nanorods with long carbon chain ligands exhibit a smaller surface free energy than those with short carbon chain ligands resulting in better in-plane alignment and large domain sizes up to dozens of micrometers in spin-coated films. A model is presented to rationalize the observed self-assembly behavior. It is based on the formation of a lyotropic liquid crystalline phase on the surface of the liquid film which is facilitated by enhanced segregation of nanorods with low surface tension to the surface. Alignment of the nanorods is controlled by radial and vertical liquid flows in the drying solution. The ability to control the orientation of the nanorods and to achieve large domain size results in significant device performance improvement. Field-effect transistors with mobilities of up to 1.2-1.4 cm2/V.s are demonstrated in spin-coated, in-plane aligned ZnO nanorod films subject to postdeposition hydrothermal growth.

Journal Article↗
PubMed2006

Multicomponent semiconducting polymer systems with low crystallization-induced percolation threshold.

Blends and other multicomponent systems are used in various polymer applications to meet multiple requirements that cannot be fulfilled by a single material. In polymer optoelectronic devices it is often desirable to combine the semiconducting properties of the conjugated species with the excellent mechanical properties of certain commodity polymers. Here we investigate bicomponent blends comprising semicrystalline regioregular poly(3-hexylthiophene) and selected semicrystalline commodity polymers, and show that, owing to a highly favourable, crystallization-induced phase segregation of the two components, during which the semiconductor is predominantly expelled to the surfaces of cast films, we can obtain vertically stratified structures in a one-step process. Incorporating these as active layers in polymer field-effect transistors, we find that the concentration of the semiconductor can be reduced to values as low as 3 wt% without any degradation in device performance. This is in stark contrast to blends containing an amorphous insulating polymer, for which significant reduction in electrical performance was reported. Crystalline-crystalline/semiconducting-insulating multicomponent systems offer expanded flexibility for realizing high-performance semiconducting architectures at drastically reduced materials cost with improved mechanical properties and environmental stability, without the need to design all performance requirements into the active semiconducting polymer itself.

Journal Article↗
PubMed2005

Effects of packing structure on the optoelectronic and charge transport properties in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole).

Spin-coated poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) films of different molecular weights (Mn= 9-255 kg/mol), both in the pristine and annealed state, were studied in an effort to elucidate changes in the polymer packing structure and the effects this structure has on the optoelectronic and charge transport properties of these films. A model based on quantum chemical calculations, wide-angle X-ray scattering, atomic force microscopy, Raman spectroscopy, photoluminescence, and electron mobility measurements was developed to describe the restructuring of the polymer film as a function of polymer chain length and annealing. In pristine high molecular weight films, the polymer chains exhibit a significant torsion angle between the F8 and BT units, and the BT units in neighboring chains are close to one another. Annealing films to sufficiently high transition temperatures allows the polymers to adopt a lower energy configuration in which the BT units in one polymer chain are adjacent to F8 units in a neighboring chain ("alternating structure"), and the torsion angle between F8 and BT units is reduced. This restructuring, dictated by the strong dipole on the BT unit, subsequently affects the efficiencies of interchain electron transfer and exciton migration. Films exhibiting the alternating structure show significantly lower electron mobilities than those of the pristine high molecular weight films, due to a decrease in the efficiency of interchain electron transport in this structure. In addition, interchain exciton migration to low energy weakly emissive states is also reduced for these alternating structure films, as observed in their photoluminescence spectra and efficiencies.

Benzothiazoles↗
PubMed2005

General observation of n-type field-effect behaviour in organic semiconductors.

Organic semiconductors have been the subject of active research for over a decade now, with applications emerging in light-emitting displays and printable electronic circuits. One characteristic feature of these materials is the strong trapping of electrons but not holes: organic field-effect transistors (FETs) typically show p-type, but not n-type, conduction even with the appropriate low-work-function electrodes, except for a few special high-electron-affinity or low-bandgap organic semiconductors. Here we demonstrate that the use of an appropriate hydroxyl-free gate dielectric--such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)--can yield n-channel FET conduction in most conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobilities of the order of 10(-3) to 10(-2) cm(2) V(-1) s(-1) have been measured in a number of polyfluorene copolymers and in a dialkyl-substituted poly(p-phenylenevinylene), all in the unaligned state. We further show that the reason why n-type behaviour has previously been so elusive is the trapping of electrons at the semiconductor-dielectric interface by hydroxyl groups, present in the form of silanols in the case of the commonly used SiO2 dielectric. These findings should therefore open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.

Journal Article↗
PubMed2005

Correlation between surface photovoltage and blend morphology in polyfluorene-based photodiodes.

We present a microscopic study of photoinduced charge generation in polyfluorene-based photovoltaic structures. The sub-100 nm lateral resolution of scanning Kelvin probe microscopy allows characterizing the three-dimensional structure of thin films of blends of poly-(9,9'-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly-(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). From the strong correlation between surface photovoltage and blend morphology, we propose a simple model for the lateral and vertical film structure identifying in particular those regions with the most efficient conduction pathway for the photocurrent.

Journal Article↗
PubMed2005

Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods.

Colloidal zinc oxide (ZnO) nanocrystals are attractive candidates for a low-temperature and solution-processible semiconductor for high-performance thin-film field-effect transistors (TFTs). Here we show that by controlling the shape of the nanocrystals from spheres to rods the semiconducting properties of spin-coated ZnO films can be much improved as a result of increasing particle size and self-alignment of the nanorods along the substrate. Postdeposition hydrothermal growth in an aqueous zinc ion solution has been found to further enhance grain size and connectivity and improve device performance. TFT devices made from 65-nm-long and 10-nm-wide nanorods deposited by spin coating have been fabricated at moderate temperatures of 230 degrees C with mobilities of 0.61 cm(2)V(-1)s(-1) and on/off ratios of 3 x 10(5) after postdeposition growth, which is comparable to the characteristics of TFTs fabricated by traditional sputtering methods.

Colloids↗
PubMed2003

Self-aligned, vertical-channel, polymer field-effect transistors.

The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern.

Journal Article↗