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Hidetaka Sawada

Publications and source records attributed to Hidetaka Sawada.

3 recordsLinked to original sources

Experimental evaluation of a spherical aberration-corrected TEM and STEM.

We have successfully developed a spherical aberration (Cs)-corrected electron microscope for probe- and image-forming systems using hexapole correctors. The performance of the microscope has been evaluated experimentally. The point resolution attained using the image-forming Cs-corrector is better than 0.12 nm. For scanning transmission electron microscopy, the Ronchigram flat area was >40 mrad in half-angle using the probe-forming Cs-corrector.

Letter↗

First experiments of selected area nano-diffraction from semiconductor interfaces using a spherical aberration corrected TEM.

Selected area diffraction (SAD) from localized areas that are approximately 20 nm in diameter has been demonstrated for the first time using a spherical-aberration-corrected transmission electron microscope (Cs-corrected TEM). We have succeeded in obtaining sharp diffraction patterns from well-defined areas on both sides of the interface between a Ti-Si-Ge alloy and Si0.54Ge0.46. The errors in the area selection by an SAD aperture are reduced to <2 nm by the Cs-correction. The applications of this technique in studies of nanometer-sized materials are discussed.

Letter↗

Imaging of a single atomic column in silicon grain boundary.

Atomic resolution high voltage electron microscopy was applied in investigations of the atomic structure of [112] sigma3 CSL grain boundary of silicon. Images of the grain boundary, viewed in the < 110 > direction, showed two types of dark spots. One type was rod shaped, which represented an atomic pair aligned in the < 111 > direction. The other was a small round spot, which represented a single atomic column in the grain boundary. The atomic structure of [112] sigma3 CSL grain boundary was directly shown from the atomic-structure image.

Journal Article↗