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Hongbin Yu

Publications and source records attributed to Hongbin Yu.

10 recordsLinked to original sources
PubMed2006

Scanning tunneling microscopy of ethylated Si(111) surfaces prepared by a chlorination/alkylation process.

Scanning tunneling microscopy (STM) and computational modeling have been used to study the structure of ethyl-terminated Si(111) surfaces. The ethyl-terminated surface was prepared by treating the H-terminated Si(111) surface with PCl5 to form a Cl-terminated Si(111) surface with subsequent exposure to C(2)H(5)MgCl in tetrahydrofuran to produce an alkylated Si(111) surface. The STM data at 77 K revealed local, close-packed, and relatively ordered regions with a nearest-neighbor spacing of 0.38 nm as well as disordered regions. The average spot density corresponded to approximately 85% of the density of Si atop sites on an unreconstructed Si(111) surface. Molecular dynamics simulations of a Si(111) surface randomly populated with ethyl groups to a total coverage of approximately 80% confirmed that the ethyl-terminated Si(111) surface, in theory, can assume reasonable packing arrangements to accommodate such a high surface coverage, which could be produced by an exoergic surface functionalization route such as the two-step chlorination/alkylation process. Hence, it is possible to consistently interpret the STM data within a model suggested by recent X-ray photoelectron spectroscopic data and infrared absorption data, which indicate that the two-step halogenation/alkylation method can provide a relatively high coverage of ethyl groups on Si(111) surfaces.

Journal Article↗
PubMed2006

Scanning tunneling microscopy and spectroscopy of wet-chemically prepared chlorinated Si111 surfaces.

Chlorine-terminated Si(111) surfaces prepared through the wet-chemical treatment of H-terminated Si(111) surfaces with PCl5 (in chlorobenzene) were investigated using ultrahigh vacuum scanning tunneling microscopy (UHV cryo-STM) and tunneling spectroscopy. STM images, collected at 77 K, revealed an unreconstructed 1 x 1 structure for the chlorination layer, consistent with what has been observed for the gas phase chlorination of H-terminated Si(111). However, the wet-chemical chlorination is shown to generate etch pits in the Si(111) surface, with an increase in etch pit density correlating with increasing PCl5 exposure temperatures. These etch pits were assumed to stabilize the edge structure through the partial removal of the <112> step edges. Tunneling spectroscopy revealed a nonzero density of states at zero bias. This is in contrast to the cases of H-, methyl-, or ethyl-terminated Si(111), in which similar measurements have revealed the presence of a large conductance gap.

Letter↗
PubMed2006

Chlorination-methylation of the hydrogen-terminated silicon(111) surface can induce a stacking fault in the presence of etch pits.

Recently, we reported STM images of the methylated Si(111) surface [prepared through chlorination-alkylation of the Si(111)-H surface] taken at 4.7 K, indicating that the torsion angle of the methyl group with respect to the subsurface silicon layer is phi = 23 +/- 3 degrees . Repulsions between H atoms in adjacent methyl groups are minimized at 30 degrees , while repulsions between H atoms and second layer Si atoms are minimized at 60 degrees . The experimental result of 23 degrees is surprising because it suggests a tendency of the methyl group toward the eclipsed configuration (0 degrees ) rather than staggered (60 degrees ). In contrast, extensive fully periodic quantum mechanical Density Functional Theory studies of this surface give an equilibrium torsion angle of 37.5 degrees , indicating a tendency toward the staggered configuration. This discrepancy can be resolved by showing that the CH3 on the step edges and etch pits interacts repulsively with the CH3 on the surface terraces unless a stacking fault is introduced between the first and second silicon layers of the Si(111)-CH3 surface terraces. We propose that this could occur during the chlorination-alkylation of the Si(111)-H surface. This stacking fault model predicted phi = 22.5 degrees measured with respect to the bulk (corresponding to phi = 37.5 degrees with respect to the second layer Si atoms). This model can be tested by measuring the orientation of the CH3 within the etch pits, which should have phi = 37.5 degrees , or by making a surface without etch pits, which should have phi = 37.5 degrees .

Journal Article↗
PubMed2005

Versatile micromirror with a multimovement mode.

A 3 x 3 micromirror array has been designed and successfully fabricated by multilayer silicon surface micromaching technology. It is composed of a bottom electrode, a supporting part, and a mirror plate and can modulate both phase and amplitude of incident light. The maximum deflection length along the vertical direction of the mirror plate is 2 microm, and the rotation angles about the Y and X axes are +/-2.3 degrees and +/-1.45 degrees, respectively; one can obtain an even larger deflection by simply increasing the thickness of the sacrificial layers.

Journal Article↗
PubMed2005

Low-temperature STM images of methyl-terminated Si(111) surfaces.

Low-temperature scanning tunneling microscopy (STM) has been used to image CH(3)-terminated Si(111) surfaces that were prepared through a chlorination/alkylation procedure. The STM data revealed a well-ordered structure commensurate with the atop sites of an unreconstructed 1 x 1 overlayer on the silicon (111) surface. Images collected at 4.7 K revealed bright spots, separated by 0.18 +/- 0.01 nm, which are assigned to adjacent H atoms on the same methyl group. The C-H bonds in each methyl group were observed to be rotated by 7 +/- 3 degrees away from the center of an adjacent methyl group and toward an underlying Si atom. Hence, the predominant interaction that determines the surface structure arises from repulsions between hydrogen atoms on neighboring methyl groups, and secondary interactions unique to the surface are also evident.

Hydrocarbons↗
PubMed2005

Quantitation of four guanine oxidation products from reaction of DNA with varying doses of peroxynitrite.

The oxidation products obtained from the reaction of peroxynitrite (ONOO-) with dG include-among others-8-oxo-7,8-dihydro-2'-deoxyguanosine (8-oxodG), 2,2-diamino-4[(2-deoxy-beta-d-erythro-pentafuranosyl)amino]-5(2H)-oxazolone (oxazolone), spiroiminodihydantoin, and N1-(beta-d-erythro-pentofuranosyl)-5-guanidinohydantoin (guanidinohydantoin). In the present work, the formation of these products from the treatment of calf thymus DNA with varying amounts of ONOO- was studied quantitatively in vitro. 13C-, 15N-labeled standards were synthesized for the nucleosides of interest, and calf thymus DNA was reacted with ONOO- and digested enzymatically down to the nucleoside level. Specific modifications in the DNA were measured by HPLC separation followed by electrospray ionization tandem mass spectrometric analysis in the selected reaction-monitoring mode. Artifacts of the above four oxidation products, arising from oxidation of dG and/or 8-oxodG during DNA digestion and subsequent workup, were evaluated with 7-15N-dG and/or stable-isotope-labeled 8-oxodG as internal standards. Levels of artifactual 8-oxodG were about 5/10(6) nucleosides. The artifacts of spiroiminodihydantoin and guanidinohydantoin, arising from 8-oxodG, were 3.7% and 0.6% of the measured 8-oxodG values, respectively. No artifacts of oxazolone were detected. 8-OxodG and oxazolone were formed dose-dependently in DNA treated with ONOO-, while the levels of spiroiminodihydantoin and guanidinohydantoin increased significantly at low ONOO- doses, and then dropped off at higher ONOO- doses. The complexity of these dose-response relationships is likely due to the dual role of peroxynitrite as both an oxidant and a nucleophile in competition with water.

Animals↗
PubMed2004

Spirodihydantoin is a minor product of 5-hydroxyisourate in urate oxidation.

[reaction: see text] Spirodihydantoin is a minor product from oxidation of uric acid ( approximately 0.15% yield), while spiroiminodihydantoin is a major product from oxidation of 8-oxo-7,8-dihydroguanine (37% yield, pH 10.2). High pH and temperature favor the formation of both spiro compounds. (18)O labeling experiments and in situ generation and decomposition of 5-hydroxy-N7-methylisouric acid indicate that spirodihydantoin and allantoin and spiroiminodihydantoin and guanidinohydantoin are products of 5-hydroxyisourate and 5-hydroxy-8-oxo-7,8-dihydroguanine intermediates, respectively.

Catalysis↗
PubMed2004

Amidine nitrosation.

The acidic nitrosation chemistry of nine acyclic secondary and tertiary amidines (Ph-N=C(R(1))NR(2)R(3); R(1) = H, CH(3), Ph; R(2), R(3) = H, Ph or (CH(3))(2) or C(CH(2))(4)) and several N-acylamidines was investigated. The principal nitrosation products were amides derived from the amino moiety and compounds derived from the benzenediazonium ion, which was independently trapped for quantitation in several cases. Tertiary amidines also produce nitrosamines in minor, but significant, yields. The benzamidines did not react, and the N-acylamidines hydrolyzed much more rapidly than they nitrosated. The data support the hypothesis that the reaction occurs by nitrosation on the imino nitrogen, followed by the addition of H(2)O to give a tetrahedral intermediate (alpha-hydroxynitrosamine) for which the main decomposition pathway generates an amide and a diazonium ion. In the case of the pyrrolidine-derived amidines, about 25% of the decomposition results in cleavage of the amine moiety, which nitrosates to give N-nitrosopyrrolidine. Pseudo-first-order rate constants for amidine nitrosation in aqueous acetic acid with excess nitrite at 25 degrees C ranged from (3 to 106) x 10(-5) s(-1), while the amidine basicity ranged over 5 pK(a) units. Rate constants corrected for amidine basicity showed the pyrrolidine derived amidines to be most reactive. The lack of benzamidine nitrosative reactivity is attributed to a very slow rate of H(2)O additon to the N-nitrosoamidinium ion and reversible nitrosation.

Amides↗
PubMed2001

Quantitative determination of the metastability of flat Ag overlayers on GaAs(110).

Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

Journal Article↗