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I H Inoue

Publications and source records attributed to I H Inoue.

2 recordsLinked to original sources

Nonvolatile memory with multilevel switching: a basic model.

There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.

Journal Article↗

Fermi surface of 3d1 perovskite CaVO3 near the Mott transition.

We present a detailed de Haas-van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement, but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.

Journal Article↗