Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces.
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Biomedical subjects
IM Vitomirov
Publications and source records attributed to IM Vitomirov.
Chemical and electronic properties of Al/
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Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces.
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Effects of growth temperature on atom distributions, Fermi-level positions, and valence-band offsets for Ge/n-type InP(110) heterojunctions.
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Erratum: Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
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Interface formation with ions and neutral atoms.
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Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.
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Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies.
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Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions.
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Dynamic-coupling model: Interpretation of temperature-, dopant-concentration-, and coverage-dependent Schottky-barrier formation.
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Development of rare-earth-semiconductor interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110).
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Temperature-dependent Al/GaAs(110) interface formation and adatom energy references.
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Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces.
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Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions.
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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.
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Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces.
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Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation.
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Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation.
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