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Igor Zutić

Publications and source records attributed to Igor Zutić.

7 recordsLinked to original sources

Spin injection and detection in silicon.

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.

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Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory.

We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface.

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Phase-sensitive tests of the pairing state symmetry in Sr(2)RuO(4).

Exotic superconducting properties of have provided strong support for an unconventional pairing symmetry. However, the extensive efforts over the past decade have not yet unambiguously resolved the controversy about the pairing symmetry in this material. While recent phase-sensitive experiments using flux modulation in Josephson junctions consisting of and a conventional superconductor have been interpreted as conclusive evidence for a chiral spin-triplet pairing, we propose here an alternative interpretation. We show that an overlooked chiral spin-singlet pairing is also compatible with the observed phase shifts in Josephson junctions and propose further experiments which would distinguish it from its spin-triplet counterpart.

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Temperature-dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin nonconserving interface scattering.

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature-dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and detector. This strongly supports the existence of a nonequilibrium resistance that depends on the relative orientation of the detector magnetization and the nonequilibrium magnetization in the normal metal providing evidence for increasing interface spin scattering with temperature.

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Tailoring ferromagnetic chalcopyrites.

If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that bandgaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and bandgaps are related in magnetic semiconductors. Here we explore theoretically these and other relationships within 64 members of a single materials class, the Mn-doped II-IV-V(2) chalcopyrites (where II, IV and V represent elements from groups II, IV and V, respectively); three of these compounds are already known experimentally to be ferromagnetic semiconductors. Our first-principles results reveal a variation of magnetic properties across different materials that cannot be explained by either of the two dominant models of ferromagnetism in semiconductors. On the basis of our results for structural, electronic and magnetic properties, we identify a small number of new stable chalcopyrites with excellent prospects for ferromagnetism.

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Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.

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