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Biomedical subjects

Ilke Arslan

Publications and source records attributed to Ilke Arslan.

5 recordsLinked to original sources
PubMed2006

Atomic scale defect analysis in the scanning transmission electron microscope.

Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope provide the ability to investigate the structure-composition-property relationship at individual defects on the atomic scale. In this article, the main principles behind the techniques will be described. The application of these methods to the analysis of individual dislocations in GaN will also be discussed. In this case, the atomic scale methods indicate that many of the structural and electronic properties of dislocations are modified by the presence of impurities, such as oxygen.

Gallium↗
PubMed2005

A novel dual-axis iterative algorithm for electron tomography.

A new algorithm for computing electron microscopy tomograms which combines iterative methods with dual-axis geometry is presented. Initial modelling using test data shows several improvements over both the weighted back-projection and simultaneous iterative reconstruction technique methods, with increased stability and tomogram fidelity under high-noise conditions. Preliminary experimental dual-axis reconstructions confirm the viability of the new algorithm.

Algorithms↗
PubMed2005

Direct visualisation, by aberration-corrected electron microscopy, of the crystallisation of bimetallic nanoparticle catalysts.

Using a scanning transmission electron microscope, corrected for aberration, ultra-high resolution images of the internal structure of nanoparticle clusters, as well as the number of atoms present per cluster, may be directly determined: it is shown that individual bimetallic clusters of Ru10Pt2 have a "molecular" structure and that when they coalesce into larger entities containing ca. 200 atoms they adopt the regular crystalline, and facetted, state of a bulk metal.

Journal Article↗
PubMed2005

Atomic and electronic structure of mixed and partial dislocations in GaN.

Here we present a detailed study of mixed dislocations in GaN, in which the complexities of the atomic arrangement in the cores have been imaged directly for the first time using an aberration corrected scanning transmission electron microscope. In addition to being present as a full-core structure, the mixed dislocation is observed to dissociate into partial dislocations separated by a stacking fault only a few unit cells in length. The generation of this stacking fault appears to be impurity driven and its presence is consistent with theoretical predictions for dislocation dissociation in materials with hexagonal crystal symmetry.

Journal Article↗