Biomedical subjects

Ivan D Avramov

Publications and source records attributed to Ivan D Avramov.

5 recordsLinked to original sources

PubMed2007

Polymer coating behavior of Rayleigh-SAW resonators with gold electrode structure for gas sensor applications.

Results from systematic polymer coating experiments on surface acoustic wave (SAW) resonators and coupled resonator filters (CRF) on ST-cut quartz with a corrosion-proof electrode structure entirely made of gold (Au) are presented and compared with data from similar SAW devices using aluminium (Al) electrodes. The recently developed Au devices are intended to replace their earlier Al counterparts in sensor systems operating in highly reactive chemical gas environments. Solid parylene C and soft poly[chlorotrifluoroethylene-co-vinylidene fluoride] (PCFV) polymer films are deposited under identical conditions onto the surface of Al and Au devices. The electrical performance of the Parylene C coated devices is monitored online during film deposition. The PCVF coated devices are evaluated after film deposition. The experimental data show that the Au devices can stand up to 40% thicker solid films for the same amount of loss increase than the Al devices and retain better resonance and phase characteristics. The frequency sensitivities of Au and Al devices to parylene C deposition are nearly identical. After coating with soft PCFV sensing film, the Au devices provide up to two times higher gas sensitivity when probed with cooling agent, octane, or tetrachloroethylene.

Acoustics↗

PubMed2006

Phase-noise reduction in surface wave oscillators by using nonlinear sustaining amplifiers.

Nonlinear sustaining amplifier operation has been investigated and applied to high-power negative resistance oscillators (NRO), using single-port surface transverse wave (STW) resonators, and single-transistor sustaining amplifiers for feedback-loop STW oscillators (FLSO) stabilized with two-port STW devices. In all cases, self-limiting, silicon (Si)-bipolar sustaining amplifiers that operate in the highly nonlinear AB-, B-, or C-class modes are implemented. Phase-noise reduction is based on the assumption that a sustaining amplifier, operating in one of these modes, uses current limiting and remains cut off over a significant portion of the wave period. Therefore, it does not generate 1/f noise over the cut-off portion of the radio frequency (RF) cycle, and this reduces the close-in oscillator phase noise significantly. The proposed method has been found to provide phase-noise levels in the -111 to -119 dBc/Hz range at 1 KHz carrier offset in 915 MHz C-class power NRO and FLSO generating up to 23 dBm of RF-power at RF versus dc (RF/dc) efficiencies exceeding 40%. C-class amplifier design techniques are used for adequate matching and high RF/dc efficiency.

Journal Article↗

PubMed2005

Low voltage surface transverse wave oscillators for the next generation CMOS technology.

The design and performance of voltage controlled surface transverse wave oscillators (VCSTWO) in the lower gigahertz frequency range, operating on supply and tuning voltages in the 1.2 to 3.3 V range, and suitable for direct interfacing with the next generation CMOS circuits are presented. By applying the "boost" principle, as used in direct current (DC)-DC converters, to the design of the sustaining amplifier, the VCSTWO outputs are switched between 0 V and a positive peak value, exceeding the supply voltage Us, to provide safe CMOS-circuit switching while keeping the radio frequency (RF)/DC efficiency to a maximum for low DC power consumption. The investigated 1.0 and 2.5 GHz VCSTWO are varactor tuned feedback-loop oscillators stabilized with two-port surface transverse wave (STW) resonators. Each VCSTWO has a DC-coupled, high-impedance switched output to drive the CMOS circuit directly, and an additional sinusoidal 50 ohmz high-power reference output available for other low-noise system applications. Phase noise levels in the -103 to -115 dBc/Hz range at 1 kHz carrier offset are achieved with 1.0 GHz VCSTWO at a RF/DC efficiency in the 21 to 29% range. The 2.5 GHz prototypes demonstrate phase noise levels in the -97 to -102 dBc/Hz range at 1 kHz carrier offset, and efficiencies range between 8 and 15%.

Journal Article↗

PubMed2004

The RF-powered surface wave sensor oscillator--a successful alternative to passive wireless sensing.

A novel, passive wireless surface acoustic wave (SAW) sensor providing a highly coherent measurand proportional frequency, frequency modulated (FM) with identification (ID) data and immune to interference with multiple-path signals is described. The sensor is appropriate for bandwidth-limited applications requiring high-frequency accuracy. It comprises a low-power oscillator, stabilized with the sensing SAW resonator and powered by the rectified radio frequency (RF) power of the interrogating signal received by an antenna on the sensor part. A few hundred microwatts of direct current (DC) power are enough to power the sensor oscillator and ID modulation circuit and achieve stable operation at 1.0 and 2.49 GHz. Reliable sensor interrogation was achieved over a distance of 0.45 m from a SAW-based interrogation unit providing 50 mW of continuous RF power at 915 MHz. The -30 to -35 dBm of returned sensor power was enough to receive the sensor signal over a long distance and through several walls with a simple superheterodyne FM receiver converting the sensor signal to a low measurand proportional intermediate frequency and retrieving the ID data through FM detection. Different sensor implementations, including continuous and pulsed power versions and the possibility of transmitting data from several measurands with a single sensor, are discussed.

Electronics↗

PubMed2003

Analysis and design of negative resistance oscillators using surface transverse wave-based single port resonators.

This practically oriented paper presents the fundamentals for analysis, optimization, and design of negative resistance oscillators (NRO) stabilized with surface transverse wave (STW)-based single-port resonators (SPR). Data on a variety of high-Q, low-loss SPR devices in the 900- to 2000-MHz range, suitable for NRO applications, are presented, and a simple method for SPR parameter extraction through Pi-circuit measurements is outlined. Negative resistance analysis, based on S-parameter data of the active device, is performed on a tuned-base, grounded collector transistor NRO, known for its good stability and tuning at microwave frequencies. By adding a SPR in the emitter network, the static transducer capacitance is absorbed by the circuit and is used to generate negative resistance only over the narrow bandwidth of the acoustic device, eliminating the risk of spurious oscillations. The analysis allows exact prediction of the oscillation frequency, tuning range, loaded Q, and excess gain. Simulation and experimental data on a 915-MHz fixed-frequency NRO and a wide tuning range, voltage-controlled STW oscillator, built and tested experimentally, are presented. Practical design aspects including the choice of transistor, negative feedback circuits, load coupling, and operation at the highest phase slope for minimum phase noise are discussed.

Journal Article↗