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J Cibert

Publications and source records attributed to J Cibert.

At least 19 recordsLinked to original sources

Motional enhancement of exciton magnetic moments in zinc-blende semiconductors.

We report a remarkable enhancement of the magnetic moments of excitons as a result of their motion. This surprising result, which we have observed in magneto-optical studies of three distinct zinc-blende semiconductors, GaAs, CdTe, and ZnSe, becomes significant as the kinetic energy of the exciton becomes comparable with its Rydberg energy and is attributed to motionally induced changes in the internal structure of the exciton. The enhancement of the magnetic moment as a function of the exciton translational wave vector can be represented by a universal equation.

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Probing the spin state of a single magnetic ion in an individual quantum dot.

The magnetic state of a single magnetic ion (Mn2+) embedded in an individual quantum dot is optically probed using microspectroscopy. The fine structure of a confined exciton in the exchange field of a single Mn2+ ion (S=5/2) is analyzed in detail. The exciton-Mn2+ exchange interaction shifts the energy of the exciton depending on the Mn2+ spin component and six emission lines are observed at zero magnetic field. Magneto-optic measurements reveal that the emission intensities in both circular polarizations are controlled by the Mn2+ spin distribution imposed by the exchange interaction with the exciton, the magnetic field, and an effective manganese temperature which depends on both the lattice temperature and the density of photocreated carriers. Under magnetic field, the electron-Mn interaction induces a mixing of the bright and dark exciton states.

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Femtosecond study of the interplay between excitons, trions, and carriers in (Cd,Mn)Te quantum wells.

We study the absorption by neutral excitons and positively charged excitons (trions) following a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the gas of free holes is created by the formation of trions. The evolution of these populations is described, including spin flip and trion formation. We evaluate the contributions of phase space filling and spin-dependent screening. We propose a new explanation of the oscillator strength stealing phenomena observed in doped quantum wells, based on the screening of neutral excitons by charge carriers. We have also found that binding holes into charged excitons excludes them from the interaction with the rest of the system, so that oscillator strength stealing is partially blocked.

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Light and electric field control of ferromagnetism in magnetic quantum structures.

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd(0.96)Mn(0.04)Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible crossover between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.

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Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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