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J H Smet

Publications and source records attributed to J H Smet.

4 recordsLinked to original sources

Cyclotron resonance of composite fermions.

It is occasionally possible to interpret strongly interacting many-body systems within a single-particle framework by introducing suitable fictitious entities, or 'quasi-particles'. A notable recent example of the successful application of such an approach is for a two-dimensional electron system that is exposed to a strong perpendicular magnetic field. The conduction properties of the system are governed by electron-electron interactions, which cause the fractional quantum Hall effect. Composite fermions, electrons that are dressed with magnetic flux quanta pointing opposite to the applied magnetic field, were identified as apposite quasi-particles that simplify our understanding of the fractional quantum Hall effect. They precess, like electrons, along circular cyclotron orbits, but with a diameter determined by a reduced effective magnetic field. The frequency of their cyclotron motion has hitherto remained enigmatic, as the effective mass is no longer related to the band mass of the original electrons and is entirely generated from electron-electron interactions. Here we demonstrate enhanced absorption of a microwave field in the composite fermion regime, and interpret it as a resonance with the frequency of their circular motion. From this inferred cyclotron resonance, we derive a composite fermion effective mass that varies from 0.7 to 1.2 times that of the electron mass in vacuum as their density is tuned from 0.6 x 10(11) cm(-2) to 1.2 x 10(11) cm(-2).

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Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor.

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.

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Ising ferromagnetism and domain morphology in the fractional quantum Hall regime.

The density driven quantum phase transition between the unpolarized and fully spin polarized nu = 2/3 fractional quantum Hall state is accompanied by hysteresis in accord with 2D Ising ferromagnetism and domain formation. The temporal behavior is reminiscent of the Barkhausen and time-logarithmic magnetic after-effects ubiquitous in familiar ferromagnets. It too suggests domain morphology and, in conjunction with NMR, intricate domain dynamics, which is partly mediated by the contact hyperfine interaction with nuclear spins of the host semiconductor.

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Quantum interference in artificial band structures.

Magnetotransport experiments on two-dimensional electron systems with an atomically precise, one-dimensional potential modulation reveal striking quantum interference oscillations. Within a semiclassical framework, they are recognized either as self-interference along closed orbits, many of them rendered possible by magnetic breakdown between Fermi contour segments of the artificial band structure, or as interference-enhanced backscattering. The known commensurability oscillations appear as a special case of the latter mechanism.

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