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J K Furdyna

Publications and source records attributed to J K Furdyna.

10 recordsLinked to original sources

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor.

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.

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Electron paramagnetic resonance shift in II1-xMnxVI diluted magnetic semiconductors in the presence of strong exchange coupling.

Electron paramagnetic resonance (EPR) has been investigated in two II1-xMnxVI alloys--Cd1-xMnxSe and Cd1-xMnxS--for a series of high Mn concentrations and at low temperatures T, i.e., under conditions where the spin subsystems in these materials are strongly coupled. We have observed a very significant shift of the resonance field from the EPR position of Mn2+ ions that increases with increasing x and with decreasing T. Furthermore, the use of multiple frequencies has allowed us to attribute the observed shift to an internal field that originates from the spin sublattice within the II1-xMnxVI host.

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Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.

Recent advances in III(1-x)Mn(x)V ferromagnetic semiconductors (for example in Ga(1-x)Mn(x)As) have demonstrated that electrical control of their spin properties can be used for manipulation and detection of magnetic signals. The Mn(2+) ions in these alloys provide magnetic moments, and at the same time act as a source of valence-band holes that mediate the Mn(2+)-Mn(2+) interactions. This coupling results in the ferromagnetic phase. In earlier workit was shown that the ferromagnetic state can be enhanced or suppressed by varying the carrier density. Here we demonstrate that, by using hydrostatic pressure to continuously tune the wavefunction overlap, one can control the strength of ferromagnetic coupling without any change in the carrier concentration. Tuning the exchange coupling by this process increases the magnetization spectacularly, and can even induce the ferromagnetic phase in an initially paramagnetic alloy. These results may open new directions for strain-engineering of nanodevices.

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Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)as wires with nanoconstrictions.

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000%.

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Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering.

The effect of hole doping on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn(1-x)MnxTe is probed by inelastic neutron scattering. The difference in the NN exchange energy DeltaJ1 in the presence and in the absence of the holes is determined. The obtained value of DeltaJ1 is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition.

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Magnetic domain structure and magnetic anisotropy in Ga1-xMn(x)As.

Large, well-defined magnetic domains, on the scale of hundreds of micrometers, are observed in Ga1-xMn(x)As epilayers using a high-resolution magneto-optical imaging technique. The orientations of the magnetic moments in the domains clearly show in-plane magnetic anisotropy, which changes through a second-order transition from a biaxial mode (easy axes nearly along [100] and [010]) at low temperatures to an unusual uniaxial mode (easy axis along [110]) as the temperature increases above about T(c)/2. This transition is a result of the interplay between the natural cubic anisotropy of the GaMnAs zinc-blende structure and a uniaxial anisotropy which attribute to the effects of surface reconstruction.

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Monitoring statistical magnetic fluctuations on the nanometer scale.

Statistical fluctuations of the magnetization are measured on the nanometer scale. As the experimental monitor we use the characteristic photoluminescence signal of a single electron-hole pair confined in one magnetic semiconductor quantum dot, which sensitively depends on the alignment of the magnetic ion spins. Quantitative access to statistical magnetic fluctuations is obtained by analyzing the linewidth broadening of the single dot emission. Our all-optical technique allows us to address a magnetic moment of only approximately equal 100 micro(B) and to resolve statistical changes on the order of a few micro(B).

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Monte Carlo simulation of sinusoidally modulated superlattice growth.

The fabrication of ZnSe/ZnTe superlattices grown by the process of rotating the substrate in the presence of an inhomogeneous flux distribution instead of the successively closing and opening of source shutters is studied via Monte Carlo simulations. It is found that the concentration of each compound is sinusoidally modulated along the growth direction, caused by the uneven arrival of Se and Te atoms at a given point of the sample, and by the variation of the Te/Se ratio at that point due to the rotation of the substrate. In this way we obtain a ZnSe(1-x)Tex alloy in which the composition x varies sinusoidally along the growth direction. The period of the modulation is directly controlled by the rate of the substrate rotation. The amplitude of the compositional modulation is monotonic for small angular velocities of the substrate rotation, but is itself modulated for large angular velocities. The average amplitude of the modulation pattern decreases as the angular velocity of substrate rotation increases and the measurement position approaches the center of rotation. The simulation results are in good agreement with previously published experimental measurements on superlattices fabricated in this manner.

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Dynamical spin response in semimagnetic quantum dots.

The dynamical response of a paramagnetic spin system to the exchange field of quasi-zero-dimensional electron-hole pairs in semiconductor quantum dots is investigated by time-resolved spectroscopy. The spin response time is extracted from the transient spectral shift of the photoluminescence signal caused by the dynamical spin alignment of magnetic ions incorporated in the crystal matrix. The formation of this ferromagnetically aligned spin complex is demonstrated to be surprisingly stable as compared to bulk systems, even at elevated temperatures and high external magnetic fields.

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